High temperature CVD systems to grow GaN or SiC based structures

Scale-up design for industrial development of a PP-MOCVD coating system

“…The design of conventional, carrier-gas MOCVD tools for industrial production focuses on the detailed fluid dynamics modelling in the reactor across the deposition zone [5]. The numerical modelling of the flow in a conventional MOCVD reactor has provided the understanding of the local mass transport phenomena inside the reactor during deposition [6,7].…”

Uniformity Control in Planetary Chemical Vapor Deposition Reactor Systems

“…Consider a representative planetary reactor system with the design and operating parameters listed in Table 1. These design and operating parameter values correspond to the work of Beccard, et al [1999], where an SiC film deposition process was simulated over a 2in wafer. The value of P e = 9 was determined so that our simulation results would corroborate with the lowest-flow simulation of Beccard, et al [1999].…”

“…Bergunde, et al [1997a] and Bergunde, et al [1997b] developed highly detailed model elements describing heat transfer in planetary reactor systems, with emphasis on radiative heat transfer. Beccard, et al [1999] used a 2D simulator to examine gas phase gallium precursor decomposition in GaN film growth and SiC film sensitivity to carrier gas flow rate. Dauelsberg, et al [2000] used a simulator to study gas phase reaction mechanisms relevant to Ga 1−x In x P film growth.…”

An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system

“…A representative set of operating parameters used to deposit gallium nitride for this reactor geometry is taken from Beccard et al [47]. In their planetary reactor system, they reported the following operating conditions: pressure 37.5 torr, susceptor temperature ðT S Þ 1373 K, and a total flow 6.5 slm.…”

“…For this system, the answer to these questions depends on two issues: the entrance mixing effect between the precursors and the temperature distribution of the gas. It is completely valid to assume that the 2-flow gas inlet design minimizes precursor interaction until shortly before the wafer location [47]. Therefore, the extent of TMG thermal decomposition (lower route) is computed for R 0 pRpR sus where R 0 ¼ 0:01 m, susceptor radius R sus ¼ 0:2 m, satellite wafer centerline radius R s ¼ 0:1 m and wafer radius r w ¼ 0:04 m. The sum of the fluxes of monomethylgallium (MMG) and elemental gallium (Ga) are assumed to govern the growth rate and, accordingly, their surface reaction chemistry is also included in the computation.…”