Stabilization of silicon honeycomb chains by trivalent adsorbates

Battaglia, Corsin; Cercellier, H.; Monney, Claude; Garnier, M. G.; Aebi, Philipp

doi:10.1209/0295-5075/77/36003

Cited by 17 publications

(15 citation statements)

References 35 publications

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“…Depending on the amount of REEs deposited and the thermal formation conditions, a plethora of reconstructions has been observed. In the submonolayer regime, the quasi-one-dimensional (5 × 2) as well as the two-dimensional (2 √ 3 × 2 √ 3)R30 • reconstructed films can be observed on the Si(111) surface [9][10][11][12][13][14][15]. The two-dimensional RESi 2 film with (1 × 1) periodicity is found at coverages around one monolayer (ML), and at higher coverages the multilayer ( √ 3 × √ 3)R30 • reconstruction can be observed, consisting of alternating layers of REEs and Si atoms with an RE 3 Si 5 stoichiometry for the silicide bulk and a periodic arrangement of Si vacancies [1,3,9,[13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Strain-induced quasi-one-dimensional rare-earth silicide structures on Si(111)

et al. 2016

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After deposition of rare-earth elements (Dy, Tb) on Si(111) at elevated temperatures, a formerly unknown (2 √ 3 × √ 3)R30 • reconstruction is observed by low-energy electron diffraction, while scanning tunneling microscopy measurements exhibit a (√ 3 × √ 3)R30 • reconstruction. On the basis of density-functional theory calculations, the structure of the larger unit cell is explained by periodically arranged subsurface Si vacancies. The vacancy network in the first subsurface layer has a (√ 3 × √ 3)R30 • periodicity, while strain is released by a (2 √ 3 × √ 3)R30 • Si vacancy network in the second subsurface layer. In addition, this vacancy network forms quasi-one-dimensional structures (striped domains) separated by periodically arranged antiphase domain boundaries. The diffraction spot profiles are explained in detail by kinematic diffraction theory calculations, and average domain widths are deduced.

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Section: Introductionmentioning

confidence: 99%

Strain-induced quasi-one-dimensional rare-earth silicide structures on Si(111)

et al. 2016

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“…In order to lower the surface energy, silicon surfaces adopt a variety of strategies allowing to reduce the number of dangling bonds. Despite the large number of known surface reconstructions, one frequently encounters common elementary structural building blocks [2,3]. Identifying these building blocks is important not only for a better understanding of these surfaces, but also serves as a guide for the elaboration of new structural models.…”

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confidence: 99%

New Structural Model for theSi(331)−(12×1)Surface Reconstruction

Battaglia

Gaál-Nagy²,

Monney

et al. 2009

Phys. Rev. Lett.

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A new structural model for the Si(331)-(12×1) reconstruction is proposed. Based on scanning tunneling microscopy images of unprecedented resolution, low-energy electron diffraction data, and firstprinciples total-energy calculations, we demonstrate that the reconstructed Si(331) surface shares the same elementary building blocks as the Si (110)-(16×2) surface, establishing the pentamer as a universal building block for complex silicon surface reconstructions.The study of semiconductor surface reconstructions has been an area of active research for many years and has gained tremendous importance with the advent of low-dimensional heteroepitaxial semiconductor nanostructures such as quantum dots and quantum wires [1]. The creation of a surface results in broken bonds, called dangling bonds. Dangling bonds are energetically unfavorable causing surface atoms to rearrange or reconstruct. This often results in highly complex atomic structures, whose determination remains a formidable challenge and requires the complementary role of different experimental and theoretical methods. In order to lower the surface energy, silicon surfaces adopt a variety of strategies allowing to reduce the number of dangling bonds. Despite the large number of known surface reconstructions, one frequently encounters common elementary structural building blocks [2,3]. Identifying these building blocks is important not only for a better understanding of these surfaces, but also serves as a guide for the elaboration of new structural models. Two of the most important strategies, encountered for instance on Si(100) [4] and Si(111) [5], are respectively the formation of dimers, where two surface atoms pair up to eliminate their dangling bonds, and the appearance of adatoms, which bond to three surface atoms thus saturating three dangling bonds. An important step towards the understanding of high-index group IV surfaces with a surface normal in between the (111) and (100) direction was the introduction of an additional reconstruction element by Dabrowski et al. [6]. They proposed a six-fold coordinated surface self-interstitial which is captured by a conglomerate of surface atoms [7,8]. This concept was subsequently adapted by An [9] and theoretically analyzed by Stekolnikov [10,11] to explain the pairs of pentagons observed in scanning tunneling microscopy (STM) images of the reconstructed Si(110) surface.In this letter we focus on the atomic structure of the Si(331)-(12×1) reconstruction. We present highresolution STM images resolving for the first time rows of * Electronic address: corsin.battaglia@unine.ch; URL: http://www.unine.ch/phys/spectro 1a)), is an important surface, since it is the only confirmed planar silicon surface with a stable reconstruction located between (111) and (110). Since the discovery of the Si(331)-(12×1) reconstruction more than 17 years ago [12] several structural models containing dimers and adatoms have been proposed [13,14]. However, none of these models is able to explain the pentagons observed in our STM image...

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“…All experimentally observed phases satisfy a simple electron-counting rule: the adsorbates must provide either one electron (to stabilize a (3×1) honeycombchain unit), or two electrons (to stabilize a (2×1) Seiwatzchain unit). 10 For monovalent adsorbates the only experimentally observed configuration is obtained with an adsorbate coverage of 1/3 ML. 16 This corresponds to one adsorbate donating one electron per (3×1) honeycomb chain unit as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Stability and structure of atomic chains on Si(111)

2008

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We study the stability and structure of self-assembled atomic chains on Si(111) induced by monovalent, divalent and trivalent adsorbates, using first-principles total-energy calculations and scanning tunneling microscopy. We find that only structures containing exclusively silicon honeycomb or silicon Seiwatz chains are thermodynamically stable, while mixed configurations, with both honeycomb and Seiwatz chains, may be kinetically stable. The stability and structure of these atomic chains can be understood using a surprisingly simple electron-counting rule

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Stabilization of silicon honeycomb chains by trivalent adsorbates

Cited by 17 publications

References 35 publications

Strain-induced quasi-one-dimensional rare-earth silicide structures on Si(111)

Strain-induced quasi-one-dimensional rare-earth silicide structures on Si(111)

New Structural Model for theSi(331)−(12×1)Surface Reconstruction

Stability and structure of atomic chains on Si(111)

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