Stabilization of sputtered AlN/sapphire templates during high temperature annealing

Hagedorn, Sylvia; Walde, Sebastian; Mogilatenko, A.; Weyers, M.; Cancellara, Leonardo; Albrecht, M.; Jaeger, Dominik

doi:10.1016/j.jcrysgro.2019.02.024

Cited by 40 publications

(36 citation statements)

References 13 publications

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“…For example, Hagedorn et al reported the formation of (111) γ‐AlON on the surface of FFA Sp‐AlN, which hinders subsequent growth. [ 20 ] NH 3 is considered effective in removing oxygen contamination and preventing H 2 etching, which leads to pit formation. Furthermore, NH 3 during cleaning was reported to be effective in removing oxygen contamination in GaN/SiC substrates.…”

Section: Resultsmentioning

confidence: 99%

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High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

Shojiki

Uesugi

Kuboya

et al. 2020

Physica Status Solidi (b)

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This study comprehensively investigates the properties of metalorganic vapor phase epitaxy (MOVPE)‐grown AlN films on high‐quality face‐to‐face annealed sputtered AlN (FFA Sp‐AlN) templates on sapphire substrates, which are highly important to control the surface morphology for various applications, such as UV light‐emitting diodes and laser diodes. The conditions of thermal cleaning and AlN growth by MOVPE are investigated to remove numerous small islands on as‐annealed FFA Sp‐AlN. Subsequent to thermal cleaning in H2 + NH3 at 1300 °C, MOVPE growth is performed with varying NH3 flow rate and growth temperature (Tg) under a constant pressure and group‐III flow rate. An atomically flat surface with an atomic step‐and‐terrace structure is obtained at a growth rate of ≈1.0 μm h−1 and a Tg of 1300 °C. Transmission electron microscopy images and secondary‐ion mass spectrometry reveal low dislocation densities and impurity concentrations. Finally, the effects of compressive strain in FFA Sp‐AlN on the lattice constant and curvature of the MOVPE‐grown AlN film on FFA Sp‐AlN are investigated. The compressive strain of the AlN film, which is carried over from FFA Sp‐AlN, can prevent crack formation but leads to a large wafer curvature after cooling down from the Tg.

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Section: Resultsmentioning

confidence: 99%

“…[ 12 ] Moreover, surface morphologies with numerous pits were frequently observed. [ 19,20 ] Huang et al reported that step bunching occurs even after the MOVPE growth of AlN films on annealed sputtered AlN/sapphire templates. [ 21 ] On the other hand, Hakamata et al successfully obtained atomically flat AlN on FFA Sp‐AlN.…”

Section: Introductionmentioning

confidence: 99%

High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

Shojiki

Uesugi

Kuboya

et al. 2020

Physica Status Solidi (b)

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“…Thus, the AlN epilayer is nearly stress-free. [17,36,40,42,43,46,53,56,[58][59][60]62,69,73,74,76,79,81,94,[98][99][100][101][102][103][104][105][106][107][108][109] It is noted that there has been no unified standard for the evaluation of TDD. X-ray rocking curve (XRC) scan is the most common method to evaluate TDD.…”

Section: Quasi-van Der Waals Epitaxy (Qvdwe)mentioning

confidence: 99%

“…Figure 23. Selected AlN/sapphire TDD by year of publication[17,36,40,42,43,46,53,56,[58][59][60]62,69,73,74,76,79,81,94,[98][99][100][101][102][103][104][105][106][107][108][109]. The ultralow TDD value of 3.4 × 10 7 cm −2 has been achieved by ELOG growth technique in 2006.…”

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confidence: 99%

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Zhang

et al. 2021

Crystals

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Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

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“…Based on the advantages of irradiation crystals, an easy and cheap temperature measurement method by thin film crystal was proposed. It was reported that the crystal quality can be reinforced after annealing [ 11 , 12 , 13 ], which indicated that the AlN thin film is a promising candidate for temperature measurement.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

Dong

et al. 2021

Sensors

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A weak C-axis preferred AlN thin film with a lot of defects was fabricated for temperature measurement. It was found that the (002) diffraction peak of the thin film increased monotonously with the increase in annealing temperature and annealing time. This phenomenon is ascribed to the evolution of defects in the lattice of the AlN film. Therefore, the relationship between defects and annealing can be expressed by the offset of (002) diffraction peak, which can be used for temperature measurement. Furthermore, a temperature interpretation algorithm Equation based on the lattice parameter (2θ), annealing temperature and annealing time was established, and a temperature interpretation software was built with MATLAB. Visual temperature interpretation is realized by the software, and the relative error is less than 7%. This study is of great significance for promoting the accurate temperature measurement on the surface of high temperature component.

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Stabilization of sputtered AlN/sapphire templates during high temperature annealing

Cited by 40 publications

References 13 publications

High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

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