Stable and epitaxial metal/III-V semiconductor heterostructures

Sands, T.; Palmstrøm, C. J.; Harbison, J. P.; Keramidas, V. G.; Tabatabaie, N.; Cheeks, T. L.; Ramesh, R.; Silberberg, Yaron

doi:10.1016/s0920-2307(05)80003-9

Cited by 191 publications

(50 citation statements)

References 175 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…95 The observed SBH also seems to depend on the thickness of the NiAl and CoAl layers. 96 Furthermore, evidence for inhomogeneous SBH was found for these interfaces. The most spectacular result from these epitaxial metallic compound interfaces is the observation of a dependence of the SBH on epitaxial orientation, observed at the lattice-matched Sc 1-x Er x As/GaAs systems, 97,98 and shown in Fig.…”

Section: Epitaxial Ms Interfaces and Theoretical Calculationsmentioning

confidence: 93%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,072

479

View full text Add to dashboard Cite

The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

show abstract

Section: Epitaxial Ms Interfaces and Theoretical Calculationsmentioning

confidence: 93%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,072

479

View full text Add to dashboard Cite

show abstract

“…The first conclusion of these observations is that the density of planar defects is reduced through growth on a vicinal surface by suppression of the defects in one {III} plane, and that there is a relation between the sense of the substrate tilt and the dominating twin variant. [1][2][3][4][5][6][7][8][9][10].…”

Section: Rbs Resultsmentioning

confidence: 99%

“…The cross-sections are observed along the [1][2][3][4][5][6][7][8][9][10] axis (which is the tilt axis for sample B). Our orientation rule consists in the [-110] axis pointing towards the observer.…”

mentioning

confidence: 99%

Influence of substrate misorientation on the structural quality of lattice matched GaAs/ScYbAs/GaAs structures

Guenais¹,

Poudoulec²,

Guivarc’h³

et al. 1992

Microsc. Microanal. Microstruct.

View full text Add to dashboard Cite

Résumé. 2014 Nous avons réalisé la croissance de 2 hétérostructures GaAs (200 nm)/Sc0,2Yb0,8As (2 nm)/GaAs par épitaxie par jets moléculaires; la première sur une surface nominale (001), et la seconde sur une surface vicinale ((001), 4°vers (111)Ga, charnière [-110] [-110]). The structures have been characterized by reflection high energy electron diffraction, Rutherford backscattering analysis and transmission electron microscopy. The Sc0.2Yb0.8As layer is matched to GaAs and grows in a two-dimensional mode, leading to a high crystalline quality. But the GaAs overlayer contains a high density of planar defects, due to its three-dimensional growth. For the two structures, the nature of the faults, their density, and their distribution are compared. The quality of the GaAs overlayer is improved through growth on a vicinal surface. This conclusion is discussed with respect to the particular growth conditions and resulting morphology of the epilayers.

show abstract

“…The RE-As has been explored first, because of its thermodynamical stability, permitting the use of elevated temperatures for the vacuum deposition, facilitating both, the ordering and the elimination of the As excess [5][6][7]. The substrate materials are, usually, GaAs and InP.…”

Section: Re Pnictidesmentioning

confidence: 99%