Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems

Takahashi, Tsuyoshi; Nihei, Misato; Makiyama, Kozo; Nishi, Masahiro; Suzuki, Toshimitsu; Hara, Naoki

doi:10.1109/iciprm.2001.929230

Cited by 11 publications

(2 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The InP surface in the recess region was covered with a thin SiN dielectric film. This is a key to obtaining stable HEMTs (10,11). Electron-beam lithography was also used to form the gate electrode.…”

Section: Vertical Scalingmentioning

confidence: 99%

InP-Based HEMTs Suitable for Ultra-High-Speed MMICs Fabrication

Hara¹,

Takahashi²,

Ohki³

et al. 2008

ECS Trans.

View full text Add to dashboard Cite

We have developed InP-based high electron mobility transistors (HEMTs) suitable for fabricating ultra-high-speed MMICs. Scaling of both vertical and horizontal directions was investigated for enhancing transconductance, which enables us to realize highspeed characteristics without ultra-short-length gate electrodes. Parasitic capacitance that originated from interlayer dielectric films for interconnection was reduced by using a cavity structure, which was formed by removing the interlayer dielectric film around the gate electrodes. We successfully fabricated a 45-nm gate InP HEMT with a cut-off frequency of 517 GHz by employing the above technologies even after the interconnection. These results indicate that the device technology reported in this paper is suitable for fabricating MMICs operating at millimeter-wave frequency.

show abstract

Section: Vertical Scalingmentioning

confidence: 99%

InP-Based HEMTs Suitable for Ultra-High-Speed MMICs Fabrication

Hara¹,

Takahashi²,

Ohki³

et al. 2008

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…The InP surface in the recess region was covered with a thin SiN dielectric film. This is a key to obtain stable HEMTs [5,6]. Electron-beam lithography was also used to form the gate electrode.…”

mentioning

confidence: 99%

Vertically scaled 80‐nm‐gate InP‐based HEMTs with a cutoff frequency of 450 GHz

Hara

Takahashi

Ohki

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We have successfully fabricated vertically scaled 80‐nm‐gate InP‐based HEMTs with fully SiN passivated gate‐recess regions and achieved high cutoff frequency of 450 GHz. By reducing gate‐recess length to 50 nm, high performance was realized even with a rather long gate length of 80 nm. We also employed a fully passivated gate‐recess structure, which is essential for obtaining thermally stable devices. Au interconnections with benzocyclobutene as an interlayer dielectric film were formed on this device and no change in DC characteristics was observed. These results indicate that the device reported in this paper is promising for integrated circuits used in millimeter‐wave applications. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract