Stable and unstable growth in molecular beam epitaxy

Johnson, _______; Orme, Christine A.; Hunt, A. W.; Graff, D.; Sudijono, J.; Sander, L. M.; Orr, Brian J.

doi:10.1103/physrevlett.72.116

Cited by 493 publications

(352 citation statements)

References 19 publications

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“…(1.2) predicts β = n = 1/3; without slope selection, Eq. (1.1) predicts β = 1/2 and n = 1/4 [10,15,21,23,25,32]. We refer to the recent work [20] for a discussion on mathematical justification of such predictions.…”

Section: Introductionmentioning

confidence: 99%

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Thin film epitaxy with or without slope selection

2003

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Abstract. Two nonlinear diffusion equations for thin film epitaxy, with or without slope selection, are studied in this work. The nonlinearity models the Ehrlich-Schwoebel effect-the kinetic asymmetry in attachment and detachment of adatoms to and from terrace boundaries. Both perturbation analysis and numerical simulation are presented to show that such an atomistic effect is the origin of a nonlinear morphological instability, in a roughsmooth-rough pattern, that has been experimentally observed as transient in an early stage of epitaxial growth on rough surfaces. Initial-boundary-value problems for both equations are proven to be well-posed, and the solution regularity is also obtained. Galerkin spectral approximations are studied to provide both a priori bounds for proving the well-posedness and numerical schemes for simulation. Numerical results are presented to confirm part of the analysis and to explore the difference between the two models on coarsening dynamics.

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Section: Introductionmentioning

confidence: 99%

“…To determine j ES , we recall the argument in [15,32]. For simplicity, consider the step-flow growth of a thin film with an average step width l. Let m = |∇h| be the macroscopic surface slope and take the lattice parameter to be the unity.…”

Section: Introductionmentioning

confidence: 99%

Thin film epitaxy with or without slope selection

2003

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“…In both cases, the used symbols define the sets of parameters for simulations: of ≈100 nm could be estimated for ZnO films at 623 K, and it is in the same order of magnitude of that employed in growth simulations of metal surfaces. 26 Note that such a diffusion length is several times shorter than the sizes of the pyramidal-shaped grains.…”

Section: A Modelmentioning

confidence: 99%

“…34 Both thus obtained α/κ and m s describe the faceting kinetics well in vicinal surfaces with moderate step-edge barriers as revealed from the good agreement with the corresponding parameters computed by kinetic Monte Carlo simulations. 26 The final mound profile is included in Fig. 4(d) evolution are identified: (i) the formation of a trench-like depletion zone around the mound perimeter and (ii) the development of sharp apexes at intermediate times.…”

Section: A Modelmentioning

confidence: 99%

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Slope selection-driven Ostwald ripening in ZnO thin film growth

2012

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The morphology evolution of polycrystalline ZnO films grown by pulsed laser deposition was investigated by atomic force microscopy and compared with morphologies simulated in 2 + 1 dimensions from a mesoscopic continuum model of selection of surface slopes. The distinctive feature of such an evolution is that the competition between grains gives rise to a singular grain coarsening mechanism, which although it matches the fingerprints of the Ostwald ripening, it remains operative under atypical growth conditions (temperatures as low as 0.28T melting and grains with sizes ranged between 20-500 nm) and is driven by the faceting of the grain faces. The resulting pyramidal single-crystalline grains from such a coarsening mechanism have been correlated with the enhanced ultraviolet lasing activity at room temperature of nanostructured ZnO.

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Ab initio study of epitaxial growth on stepped Si(100) surface

Milman¹

1997

Int. J. Quant. Chem.

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Ž .Diffusion of a Si adatom over the reconstructed Si 100 surface with a single-height step on it is studied using the pseudopotential total energy method. The S rebonded step is B shown to act as a good sink for adatoms descending onto the lower ledge. This is due to the presence of deep traps on the lower terrace and to the negative Ehrlich᎐Schwoebel Ž barrier the activation barrier for descent from the edge is 0.23 eV lower than for the . motion on a flat surface . The diffusion characteristics of the adatom on both terraces are virtually unaffected by the presence of the step. However, the dimer buckling sequence on a lower terrace is strongly dependent on the position of the adatom along the diffusion path.

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Stable and unstable growth in molecular beam epitaxy

Cited by 493 publications

References 19 publications

Thin film epitaxy with or without slope selection

Thin film epitaxy with or without slope selection

Slope selection-driven Ostwald ripening in ZnO thin film growth

Ab initio study of epitaxial growth on stepped Si(100) surface

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