Stable electroluminescence from reverse biased <i>n</i>-type porous silicon–aluminum Schottky junction device

Lazarouk, S. K.; Jaguiro, P.; Katsouba, S; Masini, G.; Monica, S. La; Maiello, G.; Ferrari, Aldo

doi:10.1063/1.115600

Cited by 91 publications

(17 citation statements)

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“…• Alumina contact: One group has reported on a device structure which shows, with external efficiency of the order of 10 −5 , high stability (> 100 hr) [107] and fast modulation (200 MHz) [108]. The device is based on PS formation in the transition regime where the produced PS layer is oxidized during the formation.…”

Section: Electroluminescent Devices Based On Simple Solid Contactmentioning

confidence: 99%

Porous Silicon

Ossicini¹,

Pavesi²,

Priolo³

2003

Springer Tracts in Modern Physics

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In 1990 it was proposed that Si when rendered porous can be an efficient light emitting system, as efficient as many III-V semiconductor systems [1]. The reason for this was attributed to the low dimensionality of the surviving Si skeleton. In addition other effects were recognized: (1) the large photon extraction efficiency due to the decrease in the effective refractive index and (2) the confinement of the carriers in regions free of recombination centers. After this very surprising report, a huge number of papers was published trying to understand the optical properties of porous silicon (PS) and the physical mechanism at the heart of the large luminescence efficiency. Soon it was realized that PS is a very fragile and highly reactive material so that many of its properties are age dependent and unstable. Over the years, sizeable progress was made both in terms of improvement of its stability and in term of efficiency of the device. Microelectronics compatibility of PS was demonstrated and integration of driving circuits with a light emitting element was performed [2]. At the same time microcavities with improved light emission properties were demonstrated [3]. At the end of 2000 another paper shocked the silicon community: the report on light amplification or optical gain in silicon nanocrystals [4]. This paper raises big hopes of the development of a silicon laser even though it is not yet clear whether PS can be used as an active material.In this chapter we will try to review the most important results about the exploitation and the understanding of the properties of PS. The chapter is divided into six parts. The first introduces how porous silicon is made. The second is aimed to demonstrate that the structure of PS is a collection of nanometric objects that contribute to the light emission process. The relevant role of the surface chemistry is underlined. The third and fourth parts discuss the essential features of the absorption and luminescence of PS in order to discriminate between the models of the recombination mechanisms. The fifth presents recent progress in the field of electrical properties of PS. The section six is an overview of the application of PS in light emitting diodes.In the last few years various conference proceedings [5], review articles [6] and edited books [7] have been published on PS.

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Section: Electroluminescent Devices Based On Simple Solid Contactmentioning

confidence: 99%

Porous Silicon

Ossicini¹,

Pavesi²,

Priolo³

2003

Springer Tracts in Modern Physics

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“…14: Nanostructured Electronics, Tsu and Zhang 691 This LED had a structure of semi-transparent metal-porous silicon layer-p-type silicon-Al electrode with an external quantum efficiency of only 10 −5 % and with very limited device lifetime. [62,63] The former involves encapsulating the porous silicon in aluminum and aluminum oxide, whereas the latter involves oxidizing the porous silicon surface to prevent further oxidization and to form stable passive layers with radiative centers. [57][58][59] These devices are represented by a structure of indium tin oxide (ITO)-p + PSi layer-n − substrate, Al/poly-ascontact-n + PSi layer-p − substrate, and a p + nn + PSi structure, respectively.…”

Section: Porous Siliconmentioning

confidence: 99%

Nanostructured Electronics and Optoelectronic Materials

Tsu

Zhang

2007

Nanostructured Materials

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“…The discovery of efficient visible photoluminescence from electrochemically etched porous silicon (PS) [1] opened a possible way to exploit Si in optoelectronics applications. Intensive investigations had led to many reports on successful fabrication of light emitting diodes (LEDs) from PS [2][3][4][5] and other forms of Si materials [6][7][8]. However, applicable devices are still not available due to the low efficiency, poor durability, and broad emission.…”

Section: Introductionmentioning

confidence: 99%

Strong ultraviolet electroluminescence from porous silicon light-emitting diodes

Tam

Yuan

et al. 2001

MRS Proc.

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Porous silicon light-emitting diodes were found to emit strong line-shaped ultraviolet under a forward bias driving voltage of about 20 volts. The intensity was sufficiently strong to pump an organic crystal, Tb-dipicolinic acid, producing clear Tb 4f intra-shell transition photoluminescence spectrum. The current-voltage characteristics of the devices also showed negative differential resistance, which was frequency dependent. In addition, purging of the device with various gases could quench the electroluminescence but the intensity recovered partially after each purging, but with no change in emission spectrum. Both results indicate the transport was influenced strongly by local space charge. From the results, the electroluminescence mechanism is tentatively attributed to core recombination in the porous layer, and the spectral characteristics is due to the microcavity effect between the top Au contact and silicon substrate. The present study shows that porous silicon has the potential as UV source in optoelectronics applications.

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Stable electroluminescence from reverse biased n-type porous silicon–aluminum Schottky junction device

Cited by 91 publications

References 0 publications

Porous Silicon

Porous Silicon

Nanostructured Electronics and Optoelectronic Materials

Strong ultraviolet electroluminescence from porous silicon light-emitting diodes

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