Stable fluoride based sputtering target for Tl-based cuprate superconducting thin film fabrication

Sojková, M.; Štrbı́k, V.; Chromík, Š.; Liday, Jozef; Vogrinčič, Peter; Dobročka, Edmund; Španková, M.; Talacko, M.; Gaži, Š.

doi:10.1016/j.vacuum.2015.05.038

Cited by 3 publications

(1 citation statement)

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“…Moreover, thallium‐containing materials demonstrate reduced sensitivity to air and moisture, a significant advantage over alkali metal‐based compounds. [ 25 ] A prime example of a thallium‐based semiconductor is thallium bromide (TlBr), notable for its 2.68 eV bandgap, [ 26 ] making it suitable for room temperature radiation detection. [ 27 ] TlBr's electronic properties, such as the mobility‐lifetime product for electrons, are comparable to those of established semiconductors like CdZnTe, [ 28 ] positioning it as a competitive alternative for room temperature radiation detection [ 28 ] in fields like homeland security, astrophysics, and medical x‐ray imaging.…”

Section: Introductionmentioning

confidence: 99%

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl₂SnX₃ (X = S, Se, Te)

Alhussain,

Ferjani,

Ben Smida

2024

Cryst. Res. Technol.

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In this work, the Density Functional Theory (DFT) analysis of the Tl2SnX3 series (X = S, Se, Te) is performed, and the ground states are confirmed by the calculation of the elastic constant Cij. Based on the DFT calculation, the Tl2SnX3 structures are direct‐gap semiconductors with bandgaps of 1.434, 1.181, and 0.907 eV, respectively. Chalcogen substitution significantly impacts their electronic structures, notably increasing the Density of States (DOS) width in the valence band from sulfur to tellurium, and shifting the dielectric function's real part, ε1(ω), toward lower energies. This change means that the optical activity and response to electric fields are better, with Tl2SnTe3 showing the best polarization response and light‐matter interaction abilities. Optical tests show that Tl2SnTe3 has very high optical absorption, peaking at ≈17 × 104 cm−1 along [010], and reflectivity levels above 90%, marking its suitability for high‐reflectivity applications. Moreover, loss energy function analysis also shows that Tl2SnTe3 has a strong electron loss resonance at lower energies, which means it has strong interactions with electrons.

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Section: Introductionmentioning

confidence: 99%

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl₂SnX₃ (X = S, Se, Te)

Alhussain,

Ferjani,

Ben Smida

2024

Cryst. Res. Technol.

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A new technique to achieve thick Tl2Ba2CaCu2O8 films for advanced applications

Liang

Niu

et al. 2023

Ceramics International

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Fabrication of hybrid thin film structures from HTS and CMR materials

Sojková

Štrbı́k

Nurgaliev

et al. 2016

J. Phys.: Conf. Ser.

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Stable fluoride based sputtering target for Tl-based cuprate superconducting thin film fabrication

Cited by 3 publications

References 10 publications

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl₂SnX₃ (X = S, Se, Te)

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl₂SnX₃ (X = S, Se, Te)

A new technique to achieve thick Tl2Ba2CaCu2O8 films for advanced applications

Fabrication of hybrid thin film structures from HTS and CMR materials

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Stable fluoride based sputtering target for Tl-based cuprate superconducting thin film fabrication

Cited by 3 publications

References 10 publications

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl2SnX3 (X = S, Se, Te)

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl2SnX3 (X = S, Se, Te)

A new technique to achieve thick Tl2Ba2CaCu2O8 films for advanced applications

Fabrication of hybrid thin film structures from HTS and CMR materials

Contact Info

Product

Resources

About

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl₂SnX₃ (X = S, Se, Te)

First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl₂SnX₃ (X = S, Se, Te)