Stable organic thin-film transistors

Jia, Xiaojia; Fuentes-Hernández, Canek; Wang, Chengyin; Park, Youngrak; Kippelen, Bernard

doi:10.1126/sciadv.aao1705

Cited by 119 publications

(95 citation statements)

References 35 publications

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“…The use of a gate dielectric consisting of multilayers instead of a single layer can also suppress bias stress–induced charge trapping. Jia et al reported that in the bilayer gate dielectric approach the addition of a second dielectric layer onto the first dielectric layer in OFETs can effectively compensate for charge trapping at the first dielectric layer . They investigated the bias stress stability of small‐molecule 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl) anthradithiophene FETs with a bilayer dielectric consisting of the fluoropolymer Cytop and metal oxide Al 2 O 3 :HfO 2 .…”

Section: Recent Progress In Improving the Bias Stress Stability Of Ormentioning

confidence: 99%

Recent Advances in the Bias Stress Stability of Organic Transistors

Park

Kim

Choi

et al. 2019

Adv Funct Materials

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In this progress report, recent advances in the development of organic transistors with superior bias stress stability and in the understanding of the charge traps that degrade device performance under prolonged bias stress are reviewed, with a particular focus on materials science and engineering methods. The phenomenological aspects of bias stress effects and the experimental methods for investigating charge traps are described. The recent progress in the bias stress stability of organic transistors is discussed in terms of those components that are the main focus of attempts to improve bias stress stability, i.e., organic semiconductor layers, gate dielectrics, and source/drain contacts. A brief summary of this progress is presented and the outlook for future research in this field is assessed. This report aims to summarize recent progress in this field and to provide some guidelines for studying bias stress-induced charge-trapping phenomena.

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Section: Recent Progress In Improving the Bias Stress Stability Of Ormentioning

confidence: 99%

Recent Advances in the Bias Stress Stability of Organic Transistors

Park

Kim

Choi

et al. 2019

Adv Funct Materials

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“…However, these organic‐based RRAMs are difficult to be apply for skin‐attachable wearable devices due to their sensitivity to external environmental factors. Specifically, moisture, which is both a component of bodily fluids and exists environmentally, can cause degradation of organic materials and fatally affect the memory operation of organic‐based RRAMs. Therefore, resolving issues such as degradation of the electrical performance of organic‐based RRAMs due to external moisture is important prior to implementation in skin‐attachable wearable devices.…”

Section: Introductionmentioning

confidence: 99%

Flexible and Waterproof Resistive Random‐Access Memory Based on Nitrocellulose for Skin‐Attachable Wearable Devices

Lee

Park

et al. 2019

Adv Funct Materials

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Memory for skin-attachable wearable devices for healthcare monitoring must meet a number of requirements, including flexibility and stability in external environments. Among various memory technologies, organic-based resistive random-access memory (RRAM) devices are an attractive candidate for skin-attachable wearable devices due to the high flexibility of organic materials. However, organic-based RRAMs are particularly vulnerable to external moisture, making them difficult to apply as skin-attachable wearable devices. In this research, RRAMs are fabricated that meet the requirements for skinattachable wearable devices using a novel organic material, nitrocellulose (NC), which is biocompatible with high water-resistance and high flexibility. The fabricated NC-based RRAMs show a stable bipolar resistive switching characteristic. In addition, the formation of a native Al oxide between Al and NC is verified, which is the source of the bipolar switching characteristic of NC-based RRAMs. Furthermore, electrical and chemical analysis is conducted after dipping and submersion into various solutions as well as deionized water to confirm the water-resistance of the NC-based RRAMs. Finally, it is also confirmed that NC-based RRAMs are suitable for use in skin-attachable wearable devices through a flexibility test. In conclusion, this study suggests that NC-based RRAMs can be applied in skin-attachable wearable devices, simplifying healthcare in the future.

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“…Particularly stable devices can be achieved using molecular additives [17] and bi-layer gate-dielectrics, [18] reaching parity with microcrystalline silicon and amorphous oxide devices. Stability investigations on organic field-effect transistors (OFETs) with lateral channels show threshold voltage shifts ranging from several volts after an hour of bias-stress down to less than 100 mV.…”

Section: Introductionmentioning

confidence: 99%

Electrically Stable Organic Permeable Base Transistors for Display Applications

Dollinger

Iseke

Guo

et al. 2019

Adv Elect Materials

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Unfortunately, high-resolution patterning techniques operating in the nanometer regime are costly and currently incompatible with the promise of low-cost flexible electronics. Hence, new device concepts need to be conceived which allow for an ultra-short channel length in conjunction with low fabrication costs. In this regard, vertical organic transistors with a channel length of ≈100 nm have generated significant interest in recent years, [4][5][6][7][8][9][10] as the vertical dimensions of an organic transistor can be easily controlled over the nanometer regime. The organic permeable base transistor (OPBT) is a truly vertical device with a semiconductor thickness in the order of 100 nm. Due to the extraordinarily short channel and a reduced influence of the contact resistance, [11] the OPBT can drive very large current densities above 1 kA cm −2[12] and reaches record-high transition frequencies of 40 MHz, [3] making it the fastest organic transistor to date. The transistor consists of a vertical stack of three electrodes separated by organic semiconductor layers. The outer electrodes constitute emitter and collector, while the central electrode is the base. It has native nano-sized holes, making it permeable for electrons. Current leakage into the base is prevented by a native oxide film around the electrode. In the on-state, a charge-accumulation channel at the oxide interface is formed, ensuring efficient charge transport through the base, while in the off-state the base potential hinders the charge conduction through the pinholes. Figure 1 shows a cross-sectional transmission electron microscopy (TEM) image of an OPBT with C 60 semiconductor layers and the ultra-thin permeable base electrode of aluminum.These advances enable a broad range of possible applications for OPBTs, including display driver circuits where high currents and fast switching are needed, [13] and radio-frequency identification (RFID) systems with MHz operation. [14,15] Realworld applications, however, require a number of other properties like integrateablity, low power consumption, and stability. OPBTs operate on low voltages, generally enabling facile integration into electronic circuits. The static power consumption of OPBTs was recently dramatically reduced by the introduction of a controlled base oxidation technique. [16] Stability, though, has not yet been studied for OPBTs and there is little research regarding the behavior of short-channel vertical organic transistors under continued electrical stress.Vertical organic permeable base transistors (OPBT) can drive large current densities of kA cm −2 and achieve record-high transition frequencies of up to 40 MHz. They are therefore an interesting candidate for numerous applications, including the use in active-matrix organic light emitting display (AMOLED) backplanes. However, the transistor characteristics are required to be stable against electrical stress. Here, the threshold voltage shifts under current-and voltage-stress conditions over various temperatures and illumination condi...

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Stable organic thin-film transistors

Abstract: Organic thin-film transistors exhibit an unprecedented level of reliability, bringing them closer to commercialization.

Cited by 119 publications

References 35 publications

Recent Advances in the Bias Stress Stability of Organic Transistors

Recent Advances in the Bias Stress Stability of Organic Transistors

Flexible and Waterproof Resistive Random‐Access Memory Based on Nitrocellulose for Skin‐Attachable Wearable Devices

Electrically Stable Organic Permeable Base Transistors for Display Applications

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