Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer

Abstract

Articles you may be interested inInvestigations on correlation between I-V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes

Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

“…However, improvement via conventional EBLs is limited due to the severe band bending of the EBL caused by strong electrostatic fields and low effective energy height [18]. Studies have also shown that inserting a superlattice EBL layer is conducive to the blue LEDs of InGaN materials [19][20][21], but there have been fewer studies on the superlattice EBL of deep UV LEDs. This study investigates different Al mole compositions of conventional EBL as they affect the performance of the optical device, then replaces the conventional EBL with a superlattice EBL, Simulation results show the performance of the deep UV LED with superlattice EBL improves tremendously.…”

Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

“…An increased Al content in the EBL for a stronger electron confinement simultaneously makes it more difficult for holes to enter the MQWs. Thus, several InGaN/GaN LEDs with novel p-EBL designs have been proposed [10][11][12] to mitigate the problem. Moreover, an n-type doped EBL structure, 13 an InGaN staircase electron injector, 14 and polarization matched AlGaInN quantum barriers (QBs) 6 have also been proposed to suppress the electron leakage.…”

Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses

“…However, the structure and parameters of the quantum well (QW) and the quantum barrier are highly dependent on the polarization fields (piezoelectric and spontaneous fields) and cannot be ignored. [28][29][30] In this study, the optical and electrical characteristics of InGaN/GaN blue LEDs with the same composition but different well thicknesses at various ambient temperatures will be discussed. [12][13][14] Recently, some researchers have designed some structures of staggered QWs, [15][16][17] InGaN-delta-AlGaN or InN QWs, 18,19 strain-compensated QWs, 20,21 and graded-composition barriers, 22 to improve the optical properties of nitridebased LEDs.…”