Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure

Chen, Ching-Hang; Hwu, Jenn–Gwo

doi:10.1016/j.mee.2009.09.013

Cited by 3 publications

(1 citation statement)

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“…The high- κ HfO 2 dielectric layer can be formed by NAO towards sputtered Hf metal layer due to the high reactivity of atomic oxygen. The method of NAO is also available in forming Al 2 O 3 from Al metal [20]. Some research focused on the enhancement of illumination and temperature sensitivity by using NAO process to form HfO 2 on interfacial layer (IL) [21,22].…”

Section: Introductionmentioning

confidence: 99%

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

Pang

Hwu

2014

Nanoscale Res Lett

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Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (Dit) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower Dit. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property.

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Section: Introductionmentioning

confidence: 99%

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

Pang

Hwu

2014

Nanoscale Res Lett

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Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

et al. 2010

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Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate

Huang

Wang

Chen

et al. 2023

IEEE J. Electron Devices Soc.

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Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure

Cited by 3 publications

References 10 publications

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate

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Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure

Cited by 3 publications

References 10 publications

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

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Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate