Stacked indium oxide/zinc oxide heterostructures as semiconductors in thin film transistor devices: a case study using atomic layer deposition

Abstract

Multilayer indium/zinc oxide thin films show high performance in transistor device performance depending on their layer sequence and thickness.

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

“…The O 1s core level spectra of the two thin‐films are dominated by a main peak with a BE of 530.8 eV, which can be assigned to metal oxide (M−O) environments (see Figure 4b). In addition, a clear shoulder on the higher BE side at ∼533 eV can be assigned to metal hydroxide (M−OH) species present on the surface and within the bulk of the thin‐film heterostructure [20,40] . The difference in intensity between the peaks of the M−O and the M−OH species amounts to ∼72 % indicating that the majority of oxygen is present as metal oxide species.…”

“…Reactive precursors are typically used in ALD, which enables deposition at relatively low temperatures [19] . By growing high‐quality films with a high degree of homogeneity, the method of ALD is a promising route for the fabrication of heterostructure‐based metal oxide thin‐films [20] …”

“…[19] By growing high‐quality films with a high degree of homogeneity, the method of ALD is a promising route for the fabrication of heterostructure‐based metal oxide thin‐films. [20] …”

Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors

“…The peaks were deconvoluted into three components: M-O-M species (pink, centered at (529.8 AE 0.1) eV), M-OH species (green, centered at (531.2 AE 0.1) eV) and M-OR species (grey, centered at (532.2 AE 0.1) eV), as widely reported in literature. 5,7,9,11,[16][17][18][31][32][33] An alternate assignment of the (531.2 AE 0.1) eV component considers it to be arising from oxygen atoms present next to Table 1 Summary of device results for sg-and c-In 2 O 3 . Averages were performed over 10 to 20 devices.…”

Структура и электрические свойства тонких пленок (ZnO/SiO-=SUB=-2-=/SUB=-)-=SUB=-25-=/SUB=-

“…В последние годы в качестве каналов тонкопленочных транзисторов (TFT) предложено использовать многослойные гетероструктуры, состоящие из слоев оксидных полупроводников [7][8][9]. Интерес к таким структурам связан с тем, что, несмотря на активное использова-ние в качестве каналов TFT широкозонных аморфных оксидных полупроводников и твердых растворов на их основе, нестабильность и недолговечность рабочих характеристик в однослойных каналах TFT, возникающая под влиянием различных условий (температура, напряжение смещения, освещенность), является одной из ключевых проблем практического применения прозрачных электропроводящих оксидов.…”