Stacked Solar Cells using Transparent and Conductive Adhesive

We propose a polyimide transparent adhesive layer dispersed with In 2 O 3 -SnO 2 (ITO) conductive particles (polyimide-ITO) to be used in the mechanical stacking of solar cells. A 20-m-thick polyimide-ITO layer had a high transmissivity from 78 to 80% for wavelengths ranging from 500 to 1000 nm and a low connecting resistivity of 2.3 cm 2 at minimum. The fabrication of stacked cell consisting of a top hydrogenated amorphous silicon (a-Si:H) p-i-n cell and a bottom hetero-junction with an intrinsic thin-layer (HIT)-type silicon cell was demonstrated using an intermediate polyimide-ITO layer. A high open circuit voltage of 1.34 V was experimentally obtained. Simultaneous electric power generation from the top and bottom solar cells was achieved. #

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“…1. 11) Top cells and bottom cells are individually fabricated first. They are then combined as stacked cells using the adhesive.…”

Section: Introductionmentioning

confidence: 99%

Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive

Sameshima

Takenezawa

Hasumi

et al. 2011

Jpn. J. Appl. Phys.

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“…Many technologies of surface passivation have been developed such as hydrogenation treatment [8,9], formation of thermally grown SiO 2 layers [10], field effect passivation caused by fixed charges in SiN layers [11], and high pressure H 2 O vapor heat treatment [12][13][14]. Especially thin passivation layer is important for metal-insulator-semiconductor (MIS) type devices [15].…”

Section: Introductionmentioning

confidence: 99%

Heat treatment in 110°C liquid water used for passivating silicon surfaces

Nakamura¹,

Motoki²,

Sameshima

et al. 2015

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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We report effective passivation of silicon surfaces by heating single crystalline silicon substrates in liquid water at 110 o C for 1 h. High values of photo-induced effective minority carrier lifetime τ eff were obtained ranging from 8.3x10 -4 to 3.1x10 -3 s and from 1.2x10 -4 to 6.0x10 -4 s over the area of 4 inch sized n-and p-type samples, respectively, while values of τ eff of initial bare samples were lower than 1.2x10 -5 s. The heat treatment in liquid water at 110 o C for 1 h resulted in low surface recombination velocities ranging from 7 to 34 cm/s and from 49 to 250 cm/s for those 4 inch sized n-and p-type samples, respectively. The thickness of the passivation layer was estimated to be approximate only 0.7 nm.Metal-insulator-semiconductor type solar cell was demonstrated with Al and Au metal formation on the passivated surface. Rectified current voltage and solar cell characteristics were observed. Open circuit voltage of 0.49 V was obtained under AM 1.5 light illumination at 100 mW/cm 2 .

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“…To solve this problem and increase the conversion efficiency, multi junction solar cells combined with large-and small-bandgap semiconductors have been widely developed. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] An epitaxial crystalline growth method has been widely studied to fabricate large-band-gap pn junction layers on small-bandgap pn junction layers. On the other hand, the method of stacking individual solar cells using conductive and transparent gels has also been investigated.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the method of stacking individual solar cells using conductive and transparent gels has also been investigated. 17,18) In this paper, we propose a simple reflection-type multi junction solar cell system using individual solar cells with different band gaps. 23) We first discuss the principle of the present method.…”

Section: Introductionmentioning

confidence: 99%

Multi junction solar cells using band-gap induced cascaded light absorption

Sameshima

Nomura²,

Yoshidomi³

et al. 2014

Jpn. J. Appl. Phys.

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We propose multi junction solar cells using an optical reflection system formed by arranging plural solar cells in decreasing order of their band gaps for achieving cascaded light absorption by their own band gaps: the first solar cell absorbs some light with a photon energy higher than the highest band gap and reflects the residual light with a lower photon energy to the second solar cell. We further propose to use plural batteries for charging electrical power generated by the individual solar cells to overcome the current matching problem in the multi-junction solar cells. We experimentally demonstrated reflection-type multi junction solar cells using commercially available hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) solar cells using air mass 1.5 light illumination. A high open circuit voltage of 24.3 V was achieved, which was a sum of 19.3 and 5.0 V for the individual a-Si:H and c-Si solar cells. However, since there was no current matching between the a-Si:H and c-Si solar cells, the a-Si:H-c-Si serially connected solar cell gave a maximum power of 0.057 W, which was lower than 0.063 W, the sum of those for the individual a-Si:H and c-Si solar cells. The method of charging electrical power from individual solar cells is useful to efficiently achieve electrical power from individual a-Si:H and c-Si solar cells in the absence of current matching in multi junction solar cells.

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Stacked Solar Cells using Transparent and Conductive Adhesive

Cited by 3 publications

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Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive

Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive

Heat treatment in 110°C liquid water used for passivating silicon surfaces

Multi junction solar cells using band-gap induced cascaded light absorption

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Stacked Solar Cells using Transparent and Conductive Adhesive

Cited by 3 publications

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Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive

Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive

Heat treatment in 110&#x00B0;C liquid water used for passivating silicon surfaces

Multi junction solar cells using band-gap induced cascaded light absorption

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Heat treatment in 110°C liquid water used for passivating silicon surfaces