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We propose a polyimide transparent adhesive layer dispersed with In 2 O 3 -SnO 2 (ITO) conductive particles (polyimide-ITO) to be used in the mechanical stacking of solar cells. A 20-m-thick polyimide-ITO layer had a high transmissivity from 78 to 80% for wavelengths ranging from 500 to 1000 nm and a low connecting resistivity of 2.3 cm 2 at minimum. The fabrication of stacked cell consisting of a top hydrogenated amorphous silicon (a-Si:H) p-i-n cell and a bottom hetero-junction with an intrinsic thin-layer (HIT)-type silicon cell was demonstrated using an intermediate polyimide-ITO layer. A high open circuit voltage of 1.34 V was experimentally obtained. Simultaneous electric power generation from the top and bottom solar cells was achieved. #

We report photoinduced carrier recombination induced by 13.56 MHz radio frequency argon plasma treatment for samples of silicon substrates coated with thermally grown SiO2 layers. The transmissivity of a 9.35 GHz microwave was measured and analyzed under illumination of 532 nm green light to the top or rear surface. Irradiation of argon plasma at 100 W for 5 min caused substantial carrier recombination. The recombination velocity of the plasma-irradiated surface was estimated to be 6000 cm/s. Investigation of 100 kHz capacitance response characteristics as a function of bias voltage for metal oxide p-type silicon structures revealed that irradiation of argon plasma increased the fixed charge density from 3.2×1011 to 3.0×1012 cm-2. Those changes were restored completely by heat treatment at 300 °C in air for 60 min.

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