Characterization of Plasma-Irradiated SiO₂/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method

Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement

“…We have recently reported a marked decrease in eff by plasma treatment, which is a very conventional method for semiconductor device fabrication processing. 16) Post-annealing is necessary to increase eff again. Moreover, a short annealing in a low-temperature atmosphere is attractive in the low thermal budget for a low fabrication cost.…”

“…1. 16) A sample was placed on a metal plate electrically grounded in a chamber facing a metal electrode. Ar gas was introduced at 5 sccm under evacuation using a turbo-molecular pump.…”

Effect of Plasma Treatment on the Sensor Properties of a Light‐Addressable Potentiometric Sensor (LAPS)

“…They are able to move throughout the layer and become trapped, recombine, or leave the layers. [16][17][18][19] The trapped charges within the dielectric layer can contribute to the decreased photocurrent signal after the plasma treatment. Neutralization of the charge accumulation over time by leakage currents under the electrical field can be the reason for the drift, which was seen in the treated side (L) of the sensor.…”

“…[9,15] Other influences of the plasma treatment should be carefully considered: an intensive plasma treatment for a long duration to obtain hydrophilic surfaces adversely influences the electrical properties and the sensing behavior of sensors. [16][17][18][19] During the plasma treatment, a plasma-induced damage occurs because of the ion bombardment, radical flux, or radiation emitted by the plasma. In particular, the radiation, e.g., vacuum ultraviolet photons (VUVs), can deeply penetrate the sensor and ionizes atoms of the semiconductor lattice and dielectric layer, resulting in imparities and hence a change of the electrical behavior of the sensor.…”

“…In particular, the radiation, e.g., vacuum ultraviolet photons (VUVs), can deeply penetrate the sensor and ionizes atoms of the semiconductor lattice and dielectric layer, resulting in imparities and hence a change of the electrical behavior of the sensor. [16][17][18][19] Because of all of these, characterization and optimization of plasma treatment play an important role in this field. However, the studies to date tended to focus on SiO 2 EIS sensors [7,8,19,20] rather than Ta 2 O 5 LAPS.…”