Stacking Faults in 4H-SiC Single Crystal

Zhao, Ning; Liu, Chunjun; Wang, Bo; Peng, Tianhuan

doi:10.15541/jim20170300

Cited by 2 publications

(2 citation statements)

References 10 publications

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“…By studying the distribution and formation mechanism of various defects [2][3][4][5][6][7][8][9][10][11][12][13][14], the key technologies to effectively reduce the defect density of SiC crystal were developed. Micropipe is a key technical index to characterize the quality of SiC crystals.…”

Section: Research On Crystal Defect Density Reduction Technologymentioning

confidence: 99%

“…In order to fully realize the excellent performance of SiC-based devices, high quality SiC single crystal growth and wafer fabrication are the key technologies. Since 1999, our research team has been focusing on the growth and fabrication of SiC single crystals [2][3][4][5][6][7][8][9][10][11][12][13][14]. In 2006, Tankeblue Company [15] was founded for the industrialization of semiconductor SiC single crystal, and promoted the development of SiC industry in China.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC

Liu

Peng

Wang

et al. 2019

MSF

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The research and commercialization of SiC based power device have been burgeoning over the last decade worldwide, which is bringing about an increasing demand on lost-cost and low-defect SiC wafers. To meet this challenge, we have been continuously making efforts on improving the crystal growth and wafer processing techniques. Now, the mass-production of high quality 4-inch, 6-inch n-type and semi-insulating SiC wafers has been realized. Statistically, the micropipe density is lower than 0.5 cm-2. The resistivity of the wafers is lower than 0.02 Ω·cm and up to 108 Ω·cm for n-type and semi-insulating SiC single crystals, respectively. A state of the art processing technique has been developed to control wafer deformation and thickness within the desired values for subsequent epitaxy. The total defect number of the epitaxial layers grown on the "epi-ready" 4-inch SiC wafer is 63, and the usable area is 97.6%, indicating the high quality of our SiC substrates.

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Section: Research On Crystal Defect Density Reduction Technologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC

Liu

Peng

Wang

et al. 2019

MSF

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Correlation between Stacking Faults in Epitaxial Layers of 4H-SiC and Defects in 4H-SiC Substrate

Guo¹,

Peng²,

Liu³

et al. 2019

Journal of Inorganic Materials

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The morphology and causes of stacking faults (SF) in homoepitaxial layers of 4H-SiC were studied. According to characteristics of PL images and morphology images of 4H-SiC five kinds of SFs have been defined. In the PL images, the morphologies of SF I and SF II-V are trapezoidal and triangular, respectively. SF II lays inside the area of SF I. In the morphology images, SF I and IV are not seen, SF II-III are carrot shaped and SF V is triangular respectively. The results show that SF I is a kind of base plane SF which originates from the base plane dislocation (BPD) lines of the substrate, parallel to <1100> direction and moving along <1120> direction during epitaxial growing. SF II and most of SF III-IV originate from BPDs in substrate. One BPD converts into threading dislocation during epitaxial growing and propagates to the surface along <0001> direction, while other BPDs or partial dislocations originating from threading dislocation propagate in (0001) plane to form triangular base plane SFs. The rest of SF III-IV and SF V originate from threading edge dislocation or other defects in substrate. SF II-III display carrots morphology because a

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Stacking Faults in 4H-SiC Single Crystal

Cited by 2 publications

References 10 publications

Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC

Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC

Correlation between Stacking Faults in Epitaxial Layers of 4H-SiC and Defects in 4H-SiC Substrate

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