Stark effect-dependent of impurity-related nonlinear optical absorption of a (In,Ga)N-GaN spherical quantum dot

Abstract

The nonlinear intra-conduction band optical properties of a wurtzite (In,Ga)N-GaN spherical quantum dot are investigated. The linear, third-order nonlinear, and total absorption coefficients (ACs) of the 1s-1p transition are computed via a combination of the quantum genetic algorithm (QGA) and the Hartree-Fock-Roothaan (HFR) method. The external applied electric field effect is examined within the single-band effective mass and the one-parabolic-band approximations under a finite potential barrier. It is found that the electric field has a great impact on the optical properties of QDs: (i) a significant redshift of the resonant peak is obtained, (ii) the maximum of the amplitude of the optical total AC decreases nonlinearly, and (iii) the Stark shift increases nonlinearly, tending toward the saturation regime. Compared with findings, good agreement is shown.