Stateful characterization of resistive switching TiO2 with electron beam induced currents

Abstract

Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam-induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2-based devices. By comparing beam energy-dependent electron beam-induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam-induced current microscopy, it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.

Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors

“…In more recent papers, Kumar et al reported modifications of the region surrounding the CFs generated in Pt/Hf/HfOx/Pt [24] and Pt/TiN/HfO2/Pt [25] devices as well. Similar effects were described in Hoskins et al for CFs in TiO2-based MIM devices with Pt electrodes [26]. Experimental results seem to indicate a permanent change of the oxide properties in the vicinity of the failure site which does not generate a deformation of the metal electrode [27].…”

Heterostructured plasmonic memristors with tunable opto-synaptic functionalities

“…The migration of oxygen vacancies in the thicker TiO 2 layer and the charge trapping phenomenon at the heterointerfaces are the most plausible reasons for the distinguished resistive switching behavior of this specific sample. 31,32 The HRS currents of the Pt/TiO 2 -In 2 O 3 (N 2 )/ Au unit are in the region of 10 À4 ampere and the LRS ones are in the region of 10 milliampere (Fig. 4c).…”

Understanding memristive switching via in situ characterization and device modeling

“…51 , American Chemical Society ( b ); ref. 52 , Nature Publishing Group ( c ); and ref. 53 , Nature Publishing Group ( d ); ref.…”

“…The local distribution of an electronic structure in TiO 2 -based memristors was measured with in situ electron beam-induced current (EBIC), as shown in Fig. 4c, providing a clear image of the underlying switching region, and reveals propagating polarization domains of symmetrical device structures 52 . Electron transport and electrochemical reactions of HfO 2 -based memristors were investigated with in situ CAFM.…”