Understanding memristive switching via in situ characterization and device modeling

Abstract

Owing to their attractive application potentials in both non-volatile memory and unconventional computing, memristive devices have drawn substantial research attention in the last decade. However, major roadblocks still remain in device performance, especially concerning relatively large parameter variability and limited cycling endurance. The response of the active region in the device within and between switching cycles plays the dominating role, yet the microscopic details remain elusive. This Review summarizes recent progress in scientific understanding of the physical origins of the non-idealities and propose a synergistic approach based on in situ characterization and device modeling to investigate switching mechanism. At last, the Review offers an outlook for commercialization viability of memristive technology.

Memristive TiO2: Synthesis, Technologies, and Applications

“…The plausible origins and mechanisms of memristive switching have been comprehensively reviewed in topical publications devoted to metal oxide memristors (Yang et al, 2008 ; Waser et al, 2009 ; Ielmini, 2016 ) as well as TiO 2 (Jeong et al, 2011 ; Szot et al, 2011 ; Acharyya et al, 2014 ). The resistive switching mechanisms in memristive materials are regularly revisited and updated in the themed review publications (Sun et al, 2019 ; Wang et al, 2020 ).…”

2D Layered Materials for Memristive and Neuromorphic Applications

“…[54] With this intrinsic property, ionic griddle for improving devices reliability can be fabricated through defects engineering to control the shape and location of conductive filaments. Although the growth of conductive filaments and electrochemical dynamics of nanoscale clusters in the TMOs-based memristive devices have been studied by transmission electron microscopy, [7,58,59] further understanding of switching mechanism may benefit from the use of transparent 2D materials. [32,56] The excellent mechanical property makes memristive devices based on pure 2D vdW heterostructure exhibit stable resistive switching behaviors against mechanical stress, [57] indicating huge potential in flexible electronics applications.…”

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demonstrated that the memristive devices exhibit many promising features, [3][4][5][6][7][8] such as non-volatility, high speed switching, high endurance, high-density integration, CMOS-compatible fabrication, and so on. These features make them ideal candidates for applications in memory devices, [3,5,9] in-memory computing, [3,[10][11][12] and edge computing.

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A Novel Characterization and Performance Measurement of Memristor Devices for Synaptic Emulators in Advanced Neuro-Computing

“…The proposed memristor with Ag and Au electrodes provides an excellent neural interface approach between pre-and postsynaptic neurons, and that could bring a new paradigm in neural prostheses. Memristors are two terminal devices, it's fundamental circuit element with metal-insulator-metal (MIM) structure, which actually maintains its resistance state once the applied switching voltage or current is removed [5,6]. However, Resistive Random-Access Memory (ReRAM), within memristor-based nanodevices, seem to fulfill the requirement of advanced neuromorphic computing [7], because they can be scaled down to the dimensions smaller than 15 nm with non-volatile, multiple-state operations and low-energy electrical switching [8][9][10][11].…”