States of direct and indirect excitons in strained zinc-blende GaN/InGaN asymmetric quantum wells

Rojas-Briseño, J. G.; Martı́nez-Orozco, J.C.

doi:10.1016/j.spmi.2017.10.017

Cited by 11 publications

(6 citation statements)

References 22 publications

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“…Restricting ourselves to the analysis of s-like excitons, this implies the proposal of a normalized trial wavefunction x  , which is built from the product of uncorrelated electron and hole subband states together with the inclusion of a hydrogenic-s-like factor [36][37][38]. Then, the exciton energy is obtained by minimizing the , and the electron-hole interaction Hamiltonian ( ) [35][36][37][38]. The binding energy of the s-like exciton resulting from the coupling of the electron in the i-th subband and the hole in the j-th subband is then expressed by…”

Section: Further mentioning

confidence: 99%

“…Exciton energies are determined by employing a variational procedure [35]. Restricting ourselves to the analysis of s-like excitons, this implies the proposal of a normalized trial wavefunction x  , which is built from the product of uncorrelated electron and hole subband states together with the inclusion of a hydrogenic-s-like factor [36][37][38]. Then, the exciton energy is obtained by minimizing the , and the electron-hole interaction Hamiltonian ( ) [35][36][37][38].…”

Section: Further mentioning

confidence: 99%

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Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Yahyazadeh

2023

Preprint

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In this study, a numerical model was used to analyze the Auger current in c-plane InGaN/GaN multiple-quantum-well light-emitting diodes (MQWLED) under hydrostatic pressure. Finite difference techniques were employed to acquire energy eigenvalues and their corresponding eigenfunctions of \({\text{InGaN/GaN}}\) MQWLED, and the hole eigenstates were calculated via a 6×6 k.p method under applied hydrostatic pressure. Our calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the total Auger coefficient (76% and 20%, respectively). It was found that a change in pressure up to 10 GPa increases the carrier density up to 0.75×1019cm−3 and 0.56×1019cm−3 for the holes and electrons, respectively, and the effective band gap. Based on the result, it could decrease the exaction binding energy, rise the electric field rate up to 0.77MV/cm, and decrease the Auger coefficient and Auger current up to 2.1×10− 31 cm6s− 1and 75A/cm2 in the multiple-quantum well regions, respectively. Our studies provided more detailed insight into the origin of the Auger current drop under hydrostatic pressure in InGaN-based LEDs.

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Section: Further mentioning

confidence: 99%

Section: Further mentioning

confidence: 99%

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Yahyazadeh

2023

Preprint

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“…[32][33][34] Exciton energies are determined by employing a variational procedure. [35][36][37][38] The binding energy of the s-like exciton resulting from the coupling of the electron in the i'th subband and the hole in the j'th subband is then given by 35 Furthermore, E g ðT; 19,21,23 and E g ð0;0Þ stands for the band gap energy of GaN or InGaN in the absence of the hydrostatic pressure and at temperature 0K. In this work, parameters α, σ, and γ are independent of the electron concentration; their numerical values are listed in Table 1.…”

Section: Calculation Modelmentioning

confidence: 99%

“… – 34 Exciton energies are determined by employing a variational procedure 35 – 38 The binding energy of the s-like exciton resulting from the coupling of the electron in the i’th subband and the hole in the j’th subband is then given by Ebij=Eie+Ejh−Ex 35 . Furthermore, Eg(T,P)=Eg(0,0)+γP+σP2+(αT2)/(T+Te) is the band gap energy of InGaN/GaN, 19 , 21 , 23 and Eg(0,0) stands for the band gap energy of GaN or InGaN in the absence of the hydrostatic pressure and at temperature 0K.…”

Section: Calculation Modelmentioning

confidence: 99%

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

Yahyazadeh

Hashempour

2023

J. Nanophoton.

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A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/ GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6 × 6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77 MV∕cm, and the Auger coefficient decreased down to 2.1 × 10 −31 and 0.6 × 10 −31 cm 6 s −1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.

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“…Even, multiple QWs semiconductor nano-structures are of interest for optical properties, as the intersubband AC, that can be tuned by an applied electric field [14]. In this line, the step-like potential profile [15][16][17][18][19][20] is an interesting system due to its asymmetry, because of this, in function of its design and used materials, induces wave function asymmetry that can enhance the dipole matrix element meaning that the expectation value of ez…”

Section: Introductionmentioning

confidence: 99%

Studies on the nonlinear optical properties of two-step GaAs/Ga_1−xAl_xAs quantum well

2020

Self Cite

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In this paper, the numerical computation for the absorption coefficient and the relative refractive index change, considering the third order correction nonlinear optical properties, is reported. This study was performed for a symmetric two-step GaAs/Ga1−xAlxAs quantum well, subjected to a constant electric field applied along the growth direction z, and an in-plane constant magnetic field B. We also consider the intense laser field effect, characterized through the laser-dressing parameter α0. The electronic structure computation was obtained by working under the effective mass approximation and the Schödinger equation was solved by diagonalization procedure. The optical properties are calculated by using the well-established compact density matrix formalism expressions for the nonlinear optical properties of interest. In general, we found that the structural parameters, as the step-like potential or the central barrier, permit the resonant peak and the amplitude design. We also found that the system becomes more sensitive to electric than to magnetic field, and finally that the intense, non-resonant, laser field can strongly change the optical properties of interest. Our results indicate that the implementation of the step-like potential profile, experimentally feasible, enhance the optical properties of interest, that falls within the THz electromagnetic range, and can be used to design a photodetector, or even can be used for quantum cascade lasers design.

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States of direct and indirect excitons in strained zinc-blende GaN/InGaN asymmetric quantum wells

Cited by 11 publications

References 22 publications

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

Studies on the nonlinear optical properties of two-step GaAs/Ga_1−xAl_xAs quantum well

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States of direct and indirect excitons in strained zinc-blende GaN/InGaN asymmetric quantum wells

Cited by 11 publications

References 22 publications

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

Studies on the nonlinear optical properties of two-step GaAs/Ga1−x Al x As quantum well

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Studies on the nonlinear optical properties of two-step GaAs/Ga_1−xAl_xAs quantum well