Static and dynamic characterization of magnetically actuated CMOS-micromachined cantilever-in-cantilever devices

Ma, Yuan; Robinson, A. M.; Lawson, R. P. W.; Allegretto, W.; Zhou, Tiansheng

doi:10.1139/cjp-76-10-747

Cited by 5 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We believe that the internal damping, for the first resonant mode, remains approximately constant and is due to the internal friction in the outer pair of arms only. Higher order resonance modes for the double and triple can involve flexing of more than the outer pair of arms [6,19]. Table 1 shows what could be termed an anomaly in the behavior of the devices: there is not a monotonic change in ρ 1rel from the single to the double and then the triple, whereas all the resonance quantities plotted previous to figure 10 show such monotonic behavior.…”

Section: Damping Relationmentioning

confidence: 97%

“…To provide accurate, onboard detection of the magnitude of the angular deflection of the cantilever platform we used polysilicon as a piezoresistor to perform this task, given the available materials inherent to the CMOS fabrication process. As a result, the polysilicon piezoresistors were imbedded at the base of the outer pair of arms of the structure as described in [6,7]. The addition of extra pairs of arms to the single CIC structure to produce the double and triple CIC structures increases the Lorentz force and decreases the stiffness of the cantilevers and hence increases their deflection.…”

Section: Sensor Design and Fabricationmentioning

confidence: 99%

See 1 more Smart Citation

Simple resonating microstructures for gas pressure measurement

Brown

Allegretto

Vermeulen

et al. 2002

J. Micromech. Microeng.

View full text Add to dashboard Cite

The resonance characteristics of an oscillating microcantilever are modified due to the changing damping effects as the ambient air pressure varies, and the device is used as an absolute pressure sensor. Three variations of the microcantilever device were designed, fabricated, and tested for changes in resonant frequency, quality factor, amplitude of oscillation, and actuating current required to maintain the amplitude of oscillation constant as the ambient pressure was varied from 15 to 1450 Torr. The device has been analyzed and a relationship has been derived to aid in the prediction of device behavior. Values for precision comparable to commercial pressure sensors are also presented for each method of detection.

show abstract

Section: Damping Relationmentioning

confidence: 97%

Section: Sensor Design and Fabricationmentioning

confidence: 99%

Simple resonating microstructures for gas pressure measurement

Brown

Allegretto

Vermeulen

et al. 2002

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…0-7803-5579-2/99/$10.00 0 1999 IEEE In this paper, we describe the use of polysilicon piezoresistors to detect the deflection and resonance of a magnetically actuated CMOS micromachined cantilever device. We have introduced the Cantilever-In-Cantilever (CIC) device in previous papers [8,9]. A SEM picture of a series of CIC devices is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…illustrates the resistance change of the piezoresistor versus the actuation current after eliminating the thermal effects[9]. The experimental data are least-squares fitted by straight lines.The room temperature resistance of the piezoresistor is 69 w2.…”

mentioning

confidence: 99%

Measuring the deflection of a micromachined cantilever-in-cantilever device using a piezoresistive sensor

Robinson²,

Lawson³

et al.

Engineering Solutions for the Next Millennium. 1999 IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.99

Self Cite

View full text Add to dashboard Cite

We have designed and tested a piezoresistor for detecting deflection of micromachined Cantilever-In-Cantilever devices making use of the polycrystalline siliconflm of the Mite1 1.5 pm CMOS IC fabrication process. Both static deflection and resonance measurements have been investigated. The change of piezoresistance is about 0.06% under static deflection, which agrees with the ANSYS simulation results. Under dynamic excitation, the piezoresistance AC signal varies linearly with angular deflection of the cantilever, although the variation depends onthe resonance mode. The resonant frequencies of the modes can readily be determined using the piezoresistor.

show abstract

CMOS-based chemical microsensors

Hierlemann

Baltes

2002

Analyst

117

View full text Add to dashboard Cite

Introduction 2 CMOS technology 3 Micromachining techniques 3.1 Bulk micromachining 3.2 Surface micromaching 4 CMOS-based chemical sensors 4.1 Chemomechanical or mass-sensitive sensors 4.1.1 Flexural-plate-wave or Lamb-wave devices 4.1.2 Resonating cantilevers 4.2 Thermal sensors 4.2.1 Catalytic thermal sensors (pellistors) 4.2.2 Thermoelectric or Seebeck-effect-based sensors 4.3 Optical sensors 4.3.1 Bioluminescent bioreporter integrated circuits (BBIC) 4.4 Electrochemical sensors 4.4.1 Voltammetric/amperometric sensors 4.4.2 Potentiometric sensors (chemotransistors) 4.4.3 Conductometric sensors 4.4.3.1 Chemoresistors 4.4.3.2 Chemocapacitors 4.5 Monolithic integration of different transducers 4.5.1 CMOS multiparameter biochemical sensor 4.5.2 CMOS single-chip gas microsensor system 5 Outlook 6 Acknowledgements 7 References

show abstract

Static and dynamic characterization of magnetically actuated CMOS-micromachined cantilever-in-cantilever devices

Cited by 5 publications

References 0 publications

Simple resonating microstructures for gas pressure measurement

Simple resonating microstructures for gas pressure measurement

Measuring the deflection of a micromachined cantilever-in-cantilever device using a piezoresistive sensor

CMOS-based chemical microsensors

Contact Info

Product

Resources

About