Static Power Consumption: Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistor

Abstract

The static power consumption due to leakage current plays a significant part in semiconductor devices, as the device dimensions continue to shrink. Low power dissipation is one of the critical factors needed to achieve high performance in a chip. New methods are continuously being implemented for reduction of leakage current in deep sub micron ultra thin SOI MOSFET using device simulator tools. In this paper, an 18nm gate length ultra thin SOI MOSFET is simulated for different silicon body thicknesses and the leakage current is determined by using the device simulator, MEDICITM. It is demonstrated that MEDICI™ device simulations is a good tool that can effectively be used for ultra thin SOI MOSFET devices to study the effect of design parameters on the leakage current. Ultra thin SOI MOSFET with 18nm gate length of different Silicon body thickness is simulated and the leakage current as determined by using MEDICI™ shows that the leakage current decreases by 10–15% as the silicon body thickness reduces by 2 nm.