Stationary-state electronic distribution in quantum dots

Král, K.; Zdeněk, P.

doi:10.1016/j.physe.2005.05.032

Cited by 15 publications

(16 citation statements)

References 28 publications

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“…In an analogy with what we did earlier [4], we assume the hole particle as heavy. In this case the spectrum of the holes in the valence band states would be dense on the energy scale.…”

Section: Outline Of the Methodsmentioning

confidence: 96%

“…This interaction will be assumed to be the well known Froehlich's coupling, which can be supposed to be the strongest mechanism of the electron-phonon scattering in the polar semiconductors. In the nonequilibrium Green's functions approach, the electron-phonon interaction will be considered in the selfconsistent Born approximation (SCBA) to the electronic self-energy, in calculating the electronic spectral density and the electron relaxation kinetics [4]. Let us also remark that we neglect the so called 'overheating' effect refering the reader to the references cited in [6].…”

Section: Outline Of the Methodsmentioning

confidence: 99%

“…The electronic spectral density in a quantum dot was considered theoretically in an earlier reference [3]. The electronic spectral density is given by the self-consistent equation for the electronic self-energy [4]:…”

Section: Outline Of the Methodsmentioning

confidence: 99%

“…The present understanding of the processes in the individual quantum dots is currently conducted along several directions. For example, the speed of the electronic energy relaxation has been interpreted with the help of at least two mechanisms, one of them is considering purely electronelectron interaction, while the other one is using only the electron-phonon interaction [3][4][5]. The question of the optical line shape of the optical transitions in the individual quantum dot electronic system has so far been discussed perhaps only with help of the electron-phonon interaction [2].…”

Section: Introductionmentioning

confidence: 99%

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Optical Line Width in Quantum Dot or Nanotransistor

Král

Menšı́k

2010

e-J. Surf. Sci. Nanotechnol.

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The width of the spectral line of the optical transitions in quantum dots is studied theoretically on the basis of the electron coupling to the longitudinal optical phonons in polar semiconductors. With using the self-consistent Born approximation to the electronic self-energy, we are able to reproduce one of the main experimental results obtained on CdSe and CuBr quantum dots, namely the linear dependence of the width of the optical line on the inverse of the quantum dot diameter. In addition to it, the theory allows to expect certain resonance features on the linear dependence of line width. Extensions of the present line-width theory may appear suitable in order to reach a better agreement in describing adequately the behavior of the line width in CdSe and InAs quantum dots.

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“…In an analogy with what we did earlier [4], we assume the hole particle as heavy. In this case the spectrum of the holes in the valence band states would be dense on the energy scale.…”

Section: Outline Of the Methodsmentioning

confidence: 96%

Section: Outline Of the Methodsmentioning

confidence: 99%

Section: Outline Of the Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical Line Width in Quantum Dot or Nanotransistor

Král

Menšı́k

2010

e-J. Surf. Sci. Nanotechnol.

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“…A comparative analysis is made for two AlAs/GaAs/AlAs and PbS/PbTe/PbS heterostructures. : 63.20.Kr, 79.60.Jv Recently various low-dimensional structures such as film systems [1-13], superlattices [14], quantum wires [14][15][16] and quantum dots [17][18][19][20][21][22] have been widely investigated both experimentally and theoretically. These heterosystems are of great interest mainly due to their unique physical properties which can be used in the electronic and opto-electronic devices.…”

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confidence: 99%

Polaron density of states of AlAs/GaAs/AlAs and PbS/PbTe/PbS type quantum well

Boichuk¹,

Borusevych²,

Kogoutiouk³

2007

Condens. Matter Phys.

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Polaron energy spectrum of AlAs/GaAs/AlAs and PbS/PbTe/PbS quasi two-dimensional heterostructure as a function of the wave-vector is investigated based on the adiabatic approximation and the Ritz variational technique. The electron interaction with confined, interface and half-space phonons is taken into account. A comparative analysis of the polaron energy spectrum in heterostructures with a finite and infinite breakdown of energy bands at the interface is performed by means of the Li-Lou-Pines variational method. The polaron density of states dependence as a function of energies with the values less than phonon energies is studied. The contribution of each phonon branch to the density of states is determined. A comparative analysis is made for two AlAs/GaAs/AlAs and PbS/PbTe/PbS heterostructures. : 63.20.Kr, 79.60.Jv Recently various low-dimensional structures such as film systems [1-13], superlattices [14], quantum wires [14][15][16] and quantum dots [17][18][19][20][21][22] have been widely investigated both experimentally and theoretically. These heterosystems are of great interest mainly due to their unique physical properties which can be used in the electronic and opto-electronic devices. Key words: polaron, heterostructure, quantum well, density of states PACSAlAs/GaAs/AlAs and PbS/PbTe/PbS with one-dimensional quantum well (QW) are among the most highly used low-dimensional heterostructures. The restriction of quasi-particle motion in one direction (perpendicular to the interface) causes an essential difference (in comparison with a massive crystal) not only in the energy spectrum of non-interactive quasi-particles, but also in the values of the interaction energy. Particularly, one can see the changes in the electron, phonon and polaron spectra, which, in its turn, effects the optical and kinetic properties of such structures.The theory of polaron states has been developed in many papers [3,4,23,24], where various calculation methods and heterostructure models were used. However, most investigations studied a polaron dependence of the main parameters (effective masses, dielectric permittivities, QW widths, etc.) at the minimum of the conduction band. Therefore, in performing theoretical interpretation of the experimental data it is assumed that the polaron dispersion law has a parabolic form just like the electron one. And the difference is observed only in the values of effective mass [23]. However, the electron-phonon interaction depends on the wave vector and this should effect the nature of the polaron distribution law.The object of this paper is to investigate the polaron dispersion law in AlAs/GaAs/AlAs, PbS/PbTe/PbS heterostructures for different values of QW width. A contribution of various phonon branches to the formation of the polaron dispersion law is determined. The polaron density of states dependence on the energy values is defined based on the calculations performed. *

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Role of Lattice Vibrations in a Nanoscale Electronic Device

Král

2009

Ceramic Transactions Series

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Stationary-state electronic distribution in quantum dots

Cited by 15 publications

References 28 publications

Optical Line Width in Quantum Dot or Nanotransistor

Optical Line Width in Quantum Dot or Nanotransistor

Polaron density of states of AlAs/GaAs/AlAs and PbS/PbTe/PbS type quantum well

Role of Lattice Vibrations in a Nanoscale Electronic Device

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