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We wish to draw an attention to a non-gibbsian behavior of zero-dimensional semiconductor nanostructures, which appears to be manifested in experiments by an effect of incomplete depopulation from electronic excited states or by an effect of up-conversion of electronic level occupation after preparing the system in the ground state of electronic excitation. In the present work the effect is interpreted with help of electron-LO-phonon interaction, which is supposed to play a role in these structures in the form of multiple-scattering of electron on the optical phonons. Quantum kinetic equation describing the process of electronic ralaxation with the inclusion of electronic multiple scattering on phonons is considered. The multiple electron scattering interpretation of the effect is supported by pointing out a considerable degree of agreement between the theoretical picture presented and a rather extensive amount of existing experimental data.Comment: 8 pages, 3 figure