Statistical electrical and failure analysis of electromigration in advanced CMOS nodes for accurate design rules checker

Abstract

This paper introduces for the first time a new test structure for electromigration which allows increased statistics and reliability tests in a testchip under typical High TemperatureOperating Life experimental ranges. Following the electrical analysis, a large panel of failure analysis methodologies was suitably used to categorize defects such as size, location, resistance impact, etc. This thorough analysis allows us to confirm that silicon failures are accurately predicted by our electromigration checker, based on reliability design rules.

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

“…Aluminium) induced by the electric current, which can lead to the generation of voids and interconnect failure on the solder layer [36]- [38]. Recently, the electron migration related reliability issue has been taken into consideration at package-level as well as chip-level [37], [39]- [41]. Generally, the current density and the related electromigration effect have impact for both the degradation of bond wire and solder layer.…”