Statistical Method of Estimating Semiconductor Switching Transition Time Enabling Condition Monitoring of Megawatt Converters

Rannestad, Bjørn; Munk‐Nielsen, Stig; Gadgaard, Kristian; Uhrenfeldt, Christian

doi:10.1109/tim.2019.2937407

Cited by 5 publications

(1 citation statement)

References 45 publications

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“…The measurement of static parameters usually involves the evaluation of the on-state performance and therefore requires the isolation of large DC-bus voltage across the device when it is in the off-state. On the other hand, the measurement of dynamic parameters demands high sampling bandwidth and noise suppression solutions [16] [17] for the fast switching transitions of IGBTs. Some typical research works, by no means exhaustive, are shown in TABLE I.…”

Section: Table I Comparison Of Hseps For Igbt Module Bonding Wire Fai...mentioning

confidence: 99%

In Situ Diagnosis of Multisite Wire Bonding Failures for Multichip IGBT Power Modules Based on Crosstalk Voltage

Zhang

et al. 2023

IEEE Trans. Compon., Packag. Manufact. Technol.

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The online detection of aging bond wires is key to the health status awareness of smart power converters. In this paper, a new health precursor of the gate voltage undershoot VGE(pk) of the complementary switch in the half-bridge structure is proposed. It can be used to identify and distinguish multi-site bonding wire failures for both insulated gate bipolar transistors (IGBTs) and freewheeling diodes (FWDs) in multichip IGBT modules. A theoretical analysis is conducted to derive this novel precursor, which is then verified by experimental results. Then, a dedicated read-out circuit is designed for the data acquisition front end that can be integrated into gate drivers for in-situ monitoring. Finally, the effectiveness of this method is evaluated under changing operating conditions including the DC-bus voltage, the load current, and the junction temperature. The effects of their fluctuations are studied and quantified, with corresponding calibration relationships provided to improve precursor accuracy.Index Terms-Bond wire diagnosis, crosstalk phenomenon, freewheeling diode (FWD), insulated gate bipolar transistor (IGBT).

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Section: Table I Comparison Of Hseps For Igbt Module Bonding Wire Fai...mentioning

confidence: 99%

In Situ Diagnosis of Multisite Wire Bonding Failures for Multichip IGBT Power Modules Based on Crosstalk Voltage

Zhang

et al. 2023

IEEE Trans. Compon., Packag. Manufact. Technol.

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Multidimensional Characterization of Temperature Sensitive Electrical Parameters in SiC Mosfets using Automation of Measurement Data Analysis

Solomakha,

Barón,

Afanasenko

et al. 2024

2024 IEEE Design Methodologies Conference (DMC)

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Open-Circuit Fault Diagnosis of NPC Inverter Based on Improved 1-D CNN Network

Yuan

et al. 2022

IEEE Trans. Instrum. Meas.

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Statistical Method of Estimating Semiconductor Switching Transition Time Enabling Condition Monitoring of Megawatt Converters

Cited by 5 publications

References 45 publications

In Situ Diagnosis of Multisite Wire Bonding Failures for Multichip IGBT Power Modules Based on Crosstalk Voltage

In Situ Diagnosis of Multisite Wire Bonding Failures for Multichip IGBT Power Modules Based on Crosstalk Voltage

Multidimensional Characterization of Temperature Sensitive Electrical Parameters in SiC Mosfets using Automation of Measurement Data Analysis

Open-Circuit Fault Diagnosis of NPC Inverter Based on Improved 1-D CNN Network

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