The 1998 International Conference on Characterization and Metrology for ULSI Technology 1998
DOI: 10.1063/1.56906
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Statistical metrology—measurement and modeling of variation for advanced process development and design rule generation

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Cited by 15 publications
(4 citation statements)
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“…Generally they manifest themselves in both temporal and spatial manner. According to the geometrical scales of their occurrence, the variations are classified at four different levels [1]: lot-to-lot, wafer-to-wafer (within-lot), die-to-die (within-wafer) and within-die. Since our main interest is to determine the effects of variations on circuit timing performance, in this work we focus on the true geometrical variations.…”
Section: Characterization Of Interconnect Variationsmentioning
confidence: 99%
“…Generally they manifest themselves in both temporal and spatial manner. According to the geometrical scales of their occurrence, the variations are classified at four different levels [1]: lot-to-lot, wafer-to-wafer (within-lot), die-to-die (within-wafer) and within-die. Since our main interest is to determine the effects of variations on circuit timing performance, in this work we focus on the true geometrical variations.…”
Section: Characterization Of Interconnect Variationsmentioning
confidence: 99%
“…Variations could exist on the same wafer or different wafers or may be on different lots. Generally, lot-to-lot and wafer-to-wafer variations are more random in nature [6]. Intra-die variation is defined as the variations that occur within the same die or chip.…”
Section: Inter-die and Intra-die Variationmentioning
confidence: 99%
“…Such variations come from process variations such as Le and Vt [2,3,4] as well as supply voltage and temperature variations. Process variations cause timing uncertainty.…”
Section: Introductionmentioning
confidence: 99%