Statistical modeling of program and read variability in resistive switching devices

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

“…The CF size dependence of data retention [104,107], noise (figure 23) and variability (figure 25) raises a potential concern for RRAM. In fact, the limitation of the CF size enables the reduction of the set/reset currents, which is mandatory for operating large crossbar arrays to avoid excessive voltage drop across the high-resistance wordlines and bitlines [117]. This trade-off between reliability and lowcurrent operation can be partially solved by adopting RRAM devices with relatively large resistance windows, to improve the read margin against noise and variability.…”

Recent trends in hardware security exploiting hybrid CMOS-resistive memory circuits

“…Owing to the random network due to the amorphous structure, the HfO x based OxRAM devices are more susceptible to these variations [88,89]. Variation in the switching parameters is not only due to the number of vacancies/defects which follow poisson distribution, but also due to the variation in the shape of the CF owing to the defect displacement [88,90]. Furthermore, the OxRAM devices operating at low compliance currents are more susceptible to parameter variations owing to limited CF size which leads to a larger impact of the defect/ vacancy size and position on the switching parameters [88].…”

Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching

“…Moreover, Figure b,c demonstrates a cycling endurance of above 10 5 switching cycles and a retention time of above 13 hours at room temperature when programming the devices with square pulses. For low-power operation of large crossbar arrays integrating VCM cells, low SET/RESET currents are required to avoid excessive voltage drop across word lines and bit lines . Further optimization of the electroforming and resistive switching process to preserve the reported reliability while increasing the LRS and HRS resistances could extend the possible applications of Al 1– x Sc x N beyond ferroelectric memories.…”

“…For low-power operation of large crossbar arrays integrating VCM cells, low SET/RESET currents are required to avoid excessive voltage drop across word lines and bit lines. 34 Further optimization of the electroforming and resistive switching process to preserve the reported reliability while increasing the LRS and HRS resistances could extend the Understanding the nature and dynamics of the breakdown phenomenon could lead to useful insights for optimizing the filamentary VCM resistive switching as well as for improving the ferroelectric cycling endurance. It is helpful to view the breakdown mechanism from the viewpoint of the ferroelectric properties of Al 1−x Sc x N. When negative (positive) voltages are applied during electroforming, the capacitors are in the Mpolar (N-polar) state before breakdown.…”