Statistical simulation, calibration and analysis of 0.25 CMOS technology

Dong, Jianxin; Belova, N. E.; Aronowitz, S.

doi:10.1109/iwstm.2000.869311

2000 5th International Workshop on Statistical Metrology (Cat.No.00TH8489

DOI: 10.1109/iwstm.2000.869311

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Statistical simulation, calibration and analysis of 0.25 CMOS technology

Jianxin Dong¹,

N. E. Belova²,

S. Aronowitz³

Abstract: A statistical simulation flow for the characterization and analysis of 0.25 CMOS technology is presented. The simulation tools PDFAB[I],Tsugrem4 and Medici were used in this work The simulation tools were calibrated to the Etest data and their capability to predict were verified. The statistical input parameters were collected from actual manufacturing distributions. Simulation results showed very good agreement with the manufacturing data.

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Robust design of 0.18 μm ASIC MOSFETs using Taguchi method with TCAD

Kamohara

Kawakami²,

Kosaka³

et al.

2001 6th International Workshop on Statistical Methodology (Cat. No.01TH8550)

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Taguchi method has been applied to optimize the 0 . 1 8~1 ASIC MOSFETs. We have proposed the suitable condition of MOSFETs to achieve the target of Vt variance, which is determined from the target of the yield and Idsat, which is determined from the demand of customers. When performing TCAD simulation, we have compounded the noise factors to reduce the number of the simulations. Based on Taguchi method, we have successfully reduced the Vt variance about half from the original device (i.e. increase the yield) and increased Idsat to meet the target in the real product.

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Robust design of 0.18 μm ASIC MOSFETs using Taguchi method with TCAD

Kamohara

Kawakami²,

Kosaka³

et al.

2001 6th International Workshop on Statistical Methodology (Cat. No.01TH8550)

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show abstract

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Statistical simulation, calibration and analysis of 0.25 CMOS technology

Cited by 1 publication

References 5 publications

Robust design of 0.18 μm ASIC MOSFETs using Taguchi method with TCAD

Robust design of 0.18 μm ASIC MOSFETs using Taguchi method with TCAD

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