Statistical simulation of high-frequency bipolar circuits

Schneider, Walter; Schröter, M.; Kraus, W.; Wittkopf, H.

doi:10.1109/date.2007.364493

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Cited by 3 publications

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“…Physics-based scalable compact models have long been used for Si/SiGe-based BJT and HBT technologies since they facilitate not only circuit optimization but also statistical and predictive modeling [3,4,5]. These capabilities contribute significantly to a reduction of design cycles and cost.…”

Section: Introductionmentioning

confidence: 99%

A length-scalable compact model for InP DHBTs

Nardmann

Schröter

Sakalas

et al. 2013

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

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A parameter set for a modified HICUM/Level0 compact model has been extracted for an InP DHBT production technology. The parameters can be scaled to describe devices of different emitter lengths very well by using simple scaling equations. This indicates that major elements of the equivalent circuit are estimated correctly and is the first step towards a fully scalable compact model for a InP HBT technology.

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Section: Introductionmentioning

confidence: 99%