Statistical Stability Characterization of Schmitt Trigger Based 10-T SRAM Cell Design

Sachdeva, Ashish; Tomar, V. K.

doi:10.1109/spin48934.2020.9071365

Cited by 10 publications

(1 citation statement)

References 24 publications

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“…Considering the limitations of conventional methods, more and more people are adopting new methods to measure the stability of SRAM. The papers [7,8] both use the latest N-curve method to measure the stability of SRAM, but these papers do not compare the two methods in practice, let alone analyze the effect of leakage current on the stability of the memory cell under subthreshold levels.…”

Section: Introductionmentioning

confidence: 99%

Leakage Current Stability Analysis for Subthreshold SRAM

Bai

Wang

et al. 2022

Electronics

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Low-power memories typically operate in the subthreshold region of the device; however, as the supply voltage continues to decrease, the impact of leakage current on SRAM stability becomes more significant. The traditional method of measuring static noise tolerance only considers the effect of voltage, and the measurement results are not accurate enough. Therefore, this paper proposes a leakage-current-based stability analysis that provides better metrics, reads current noise tolerance (RINM) and writes current noise tolerance (WINM) to measure the stability of subthreshold SRAMs. Both currents and voltages were taken into account. The results demonstrate that the method is more accurate than the conventional method under subthreshold levels.

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Section: Introductionmentioning

confidence: 99%