Status And Prospects Of Sic-Masks For Synchrotron Based X-Ray Lithography

Lüthje, H.; Matthiessen, B.; Harms, M.; Bruns, A. V.

doi:10.1117/12.940348

Cited by 7 publications

(1 citation statement)

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“…Our goal is to find an absorber/mask carrier combination which allows for high resolution and good pattern placement accuracy, yet is compatible with standard IC batch-oriented processing. The search for a suitable mask blank and absorber combination for deep x-ray lithography (DXRL) benefits from the experience of XRL technology [14][15][16][17]. The relevant properties of the mask materials are listed in table 1 and figure 1.…”

Section: Background In Mask Materials and Processing Optionsmentioning

confidence: 99%

Masks for high aspect ratio x-ray lithography

Malek

Jackson

Bonivert

et al. 1996

J. Micromech. Microeng.

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The requirements for deep x-ray lithography (DXRL) masks are reviewed and a recently developed cost effective mask fabrication process is described. The review includes a summary of tabulated properties for materials used in the fabrication of DXRL masks. X-ray transparency and mask contrast are calculated for material combinations using simulations of exposure at the Advanced Light Source (ALS) at Berkeley, and compared to the requirements for standard x-ray lithography (XRL) mask technology. Guided by the requirements, a cost-effective fabrication process for manufacturing high contrast masks for DXRL has been developed. Thick absorber patterns () on a thin silicon wafer (m) were made using contact printing in thick positive (Hoechst 4620) and negative (OCG 7020) photoresist and subsequent gold electrodeposition. Gold was deposited using a commercially available gold sulphite bath with low current density and good agitation. The resultant gold films were fine-grained and stress-free. Replication of such masks into thick acrylic sheets was performed at the ALS.

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Section: Background In Mask Materials and Processing Optionsmentioning

confidence: 99%