Status and Trends in Epitaxy and Defects

Osawa, Hiroshi; Mabuchi, Yota; Nishihara, Yoko; Guo, Ling; Ishibashi, Naoto; Fukada, Keisuke; Kamei, Koji; Momose, Kenji

doi:10.4028/www.scientific.net/msf.924.67

Cited by 7 publications

(3 citation statements)

References 5 publications

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“…Since 1SSF expansion was reported to originate from BPDs in the epitaxial layer, great efforts have been made to reduce the BPD density in epitaxial layers 26 – 29 . Thanks to dislocation conversion from BPDs to threading edge dislocations (TEDs) propagating in the [0001] direction during the epitaxial growth process, the typical BPD density in commercial SiC epitaxial wafers is almost zero (less than 1 cm −2 ) 3 , 5 , 30 . However, 1SSF expansion underneath BPD-TED conversion points under high current stress has been reported 31 – 33 .…”

Section: Introductionmentioning

confidence: 99%

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Harada

Mii

Sakane³

et al. 2022

Sci Rep

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SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 1011 cm−2 without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.

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Section: Introductionmentioning

confidence: 99%

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Harada

Mii

Sakane³

et al. 2022

Sci Rep

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“…Recently, epitaxial growth of thick and low-doped n-type 4H-SiC films has been demonstrated. For example, Osawa et al 7) reported that n-type 4H-SiC films with a thickness of 100 μm and doping concentration of 3.2 × 10 14 cm −3 were grown on 100 mm diameter wafers with a very low defect density. Daigo et al 8) reported that films with a thickness of 150 μm and doping concentration of 3.5 × 10 14 cm −3 were grown on 150 mm diameter wafers with a thickness uniformity of 1.9% (σ/mean) and doping uniformity of 4.6% (σ/mean).…”

Section: Introductionmentioning

confidence: 99%

Influence of residual dopants to net doping concentration in N-type 4H-SiC films grown using high-speed wafer rotation vertical CVD method

Daigo¹,

Takada²,

Kurashima³

et al. 2022

Jpn. J. Appl. Phys.

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In this study, the influence of residual dopants on the net doping concentration in n-type 4H-SiC epitaxial films grown at different N2 flow rates and C/Si ratios were investigated. By reducing the N2 flow rate, the influence of the residual donors on the net doping concentration was observed to become dominant for the films grown at low C/Si ratios and that of the residual acceptors on the net doping concentration becomes dominant for the films grown at high C/Si ratios. For the films grown at the middle C/Si ratio, an apparent proportional relation due to the compensation balance between the residual and intentional donors and the residual acceptors was observed in the N2 flow rate dependence of the net doping concentration. Furthermore, the decay curve of the net doping concentration observed in the C/Si ratio dependence is affected by the compensation balance between the intentional dopant concentration and the residual dopant concentration.

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“…Crystal defect densities in the wafer are being reduced continuously and the wafer size has been enlarged to 200 mm in recent work. [11][12][13] However, various types of stacking faults (SFs) in the SiC wafers remain, resulting in substandard device performance and reducing the effective device area within the wafer. 14,15) In particular, single Shockley-type stacking faults (1SSFs) in the epilayer are attracting attention because the 1SSFs expand from basal plane dislocations during forward current conduction in the bipolar devices, significantly degrading device performances and reliability, which is socalled bipolar degradation.…”

mentioning

confidence: 99%

Limited current conduction due to various types of stacking faults in n-type 4H-SiC epilayers

Asada

Murata

Tsuchida

2022

Appl. Phys. Express

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Impacts of various types of stacking faults (SFs) on electron conduction in an n-type 4H-SiC epilayer were experimentally investigated. N-type Schottky barrier diodes were fabricated, containing a SF plane in the active area with a covering ratio of unity, whereupon the current-voltage characteristics were evaluated within a temperature range of 293 to 523 K. The forward current was significantly limited due to the SFs, the degree of which depended on the type of SF, and the current limitation was moderated by increasing the temperature. These results could be consistently explained by the well-known quantum well model.

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Status and Trends in Epitaxy and Defects

Cited by 7 publications

References 5 publications

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Influence of residual dopants to net doping concentration in N-type 4H-SiC films grown using high-speed wafer rotation vertical CVD method

Limited current conduction due to various types of stacking faults in n-type 4H-SiC epilayers

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