Status of long-wave Auger suppressed HgCdTe detectors operating &gt; 200 K

Martyniuk, Piotr; Gawron, W.; Stępień, D.; Pawluczyk, J.; Kębłowski, A.; Madejczyk, P.; Kopytko, M.; Koźniewski, A.

doi:10.1515/oere-2015-0036

Cited by 4 publications

(3 citation statements)

References 34 publications

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“…Generally, the design of the presented devices is similar to those presented in [14,15]. The n + p + B p πN + Hg 1−x Cd x Te heterostructure consists of a low p-type doped (π) narrow-gap absorber, wide-bandgap heavily doped p-type barrier (B p ) and heavily doped contacts.…”

Section: Device Fabrication and Designmentioning

confidence: 99%

LWIR HgCdTe barrier photodiode with Auger-suppression

Kopytko

Kębłowski

Gawron

et al. 2016

Semicond. Sci. Technol.

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This paper reports on advanced metalorganic chemical vapor deposition (MOCVD) grown HgCdTe barrier photodiodes for long wave infrared (LWIR) application. The n + p + B p πN + device is a concept of a specific barrier bandgap architecture integrated with Auger-suppression as a good solution for high operating temperature (HOT) infrared detectors with high detectivity and sub-nanosecond time constant. The design approach, growth aspects and detector characterization of HgCdTe n + p + B p πN + barrier photodiodes operated with thermoelectric cooling (230 K) have been discussed in the paper. The influence of absorber thickness on the device's properties has been analyzed in the experiment.

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Section: Device Fabrication and Designmentioning

confidence: 99%

LWIR HgCdTe barrier photodiode with Auger-suppression

Kopytko

Kębłowski

Gawron

et al. 2016

Semicond. Sci. Technol.

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“…Several literature studies have been published on the issues surrounding Augersuppressed HgCdTe photodiodes [10][11][12][13][14][15][16][17][18]. Among other things, the numerical modeling of predicted parameters [10,11], engineering steps (aimed at optimizing the photodiode architecture [12] and noise [13]), and time response studies (which have shown that the highest detectivity is obtained close to the negative resistance conditions at the expense of a long time constant [14][15][16]) were performed. It was also shown that, with good-quality material and with low concentrations of residual impurities and defects, the HgCdTe photodiode can operate in conditions associated with the complete depletion of the absorber [19,20].…”

Section: Introductionmentioning

confidence: 99%

“…Several literature studies have been published on the issues surrounding Auger-suppressed HgCdTe photodiodes [ 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ]. Among other things, the numerical modeling of predicted parameters [ 10 , 11 ], engineering steps (aimed at optimizing the photodiode architecture [ 12 ] and noise [ 13 ]), and time response studies (which have shown that the highest detectivity is obtained close to the negative resistance conditions at the expense of a long time constant [ 14 , 15 , 16 ]) were performed. It was also shown that, with good-quality material and with low concentrations of residual impurities and defects, the HgCdTe photodiode can operate in conditions associated with the complete depletion of the absorber [ 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode

Kopytko,

Majkowycz,

Murawski

et al. 2024

Sensors

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Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The n+-P+-π-N+ photodiode structure was grown by following the metal–organic chemical vapor deposition (MOCVD) technique on a GaAs substrate. DLTS has revealed two defects: one electron trap with an activation energy value of 252 meV below the conduction band edge, located in the low n-type-doped transient layer at the π-N+ interface, and a second hole trap with an activation energy value of 89 meV above the valence band edge, located in the π absorber. The latter was interpreted as an isolated point defect, most probably associated with mercury vacancies (VHg). Numerical calculations applied to the experimental data showed that this VHg hole trap is the main cause of increased dark currents in the LWIR photodiode. The determined specific parameters of this trap were the capture cross-section for the holes of σp = 10−16–4 × 10−15 cm2 and the trap concentration of NT = 3–4 × 1014 cm−3. PL measurements confirmed that the trap lies approximately 83–89 meV above the valence band edge and its location.

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