Status review on earth-abundant and environmentally green Sn-X (X = Se, S) nanoparticle synthesis by solution methods for photovoltaic applications

High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

“…When configured into devices, these NW detectors exhibit excellent optoelectronic characteristics with ultrahigh optical gain, controllable spectrum sensitivity, large photoresponse bandwidth, and considerable light-to-current conversion efficiency. − Among many nanomaterials, IV–VI semiconductor nanomaterials with narrow band gaps, such as SnS, − SnS 2 , , SnSe, − SnSe 2 , PbS, and PbSe, have been demonstrated with great potency for optical and optoelectronic utilizations in the infrared (IR) regime. For example, tin selenide (SnSe) is an important p-type semiconductor with indirect and direct band gaps of 0.90–1.12 and 1.30–1.55 eV, respectively, which are similar to those of typical solar cell materials ( e.g ., Si and CdTe), capable of absorbing most of the solar spectrum as ideal photovoltaic materials. − Apart from solar cells, SnSe has also attracted much attention in the application fields of storage switching devices and photodetectors. , In this regard, various SnSe nanostructures, ,,,− especially in the geometry of NWs, ,− have been extensively investigated. Particularly, Shen et al .…”

“…At the same time, tin sulfide (SnS) is another essential p-type IV–VI semiconductor with indirect and direct band gaps of 1.2–1.5 and 1.0–1.2 eV, correspondingly. Similar to SnSe NWs, SnS NWs have also been shown with promising prospects as active components in field emitters, battery materials, gas sensors, photodetectors, − and solar cells . Until now, although a majority of the work has been focused on the synthesis of SnSe and SnS NWs, ,− very limited study on their electrical and optoelectronic properties for device applications ( e.g ., highly efficient photodetectors) has been reported.…”

“…Similar to SnSe NWs, SnS NWs have also been shown with promising prospects as active components in field emitters, 29 battery materials, 10 gas sensors, 11 photodetectors, 30−32 and solar cells. 22 Until now, although a majority of the work has been focused on the synthesis of SnSe and SnS NWs, 29,33−35 very limited study on their electrical and optoelectronic properties for device applications (e.g., highly efficient photodetectors) has been reported. Surprisingly, it is as well found that most of the NW-based photodetector studies are primarily based on the n-type channel material.…”

Thin film solar cells of cubic structured SnS‐SnSe

“…The equivalence of SnS‐CUB and π‐SnS has been the subject of a joint work later on . The atomic arrangement, bonding scheme, and the reason for substantial thermal stability observed in the new polymorph of SnS, comparable with that of its well‐studied orthorhombic polymorph (SnS‐ORT) , were presented there. In addition to application in solar cell of SnS‐CUB, other possibilities were also suggested, arising from the lack of center‐of‐symmetry in the atomic arrangement in this CUB‐unit cell.…”

“…The period 2006–2016 saw much research effort to place SnS‐ORT or SnSe‐ORT as solar cell materials either in thin film structures or by using their nanocrystals . We consider that perspective offered by SnS and SnSe would be improved by their cubic polymorphs as well as a wide range of SnS x Se 1− x ‐CUB thin films, which may be produced from SnS‐SnSe‐CUB stacks.…”