1978
DOI: 10.1109/tns.1978.4329523
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Steady-State and Transient Radiation Effects in Precision Quartz Oscillators

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Cited by 49 publications
(10 citation statements)
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“…The ever-decreasing size of electronics has pushed MOS size into the nanometer scale where the presence of atomic-level defects affects device reliability [1]. Defects in silica also degrade the performance of MOS-based electronics by creating long-lived voltage shifts [2], change dispersion and attenuation in optical fibers [3], and modify oscillator frequencies [4,5]. Many such defects are created by radiation which is problematic because SiO 2 -based devices are often employed in environments subject to ionizing radiation (in satellites, nuclear power plants, medical studies, etc.)…”
mentioning
confidence: 99%
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“…The ever-decreasing size of electronics has pushed MOS size into the nanometer scale where the presence of atomic-level defects affects device reliability [1]. Defects in silica also degrade the performance of MOS-based electronics by creating long-lived voltage shifts [2], change dispersion and attenuation in optical fibers [3], and modify oscillator frequencies [4,5]. Many such defects are created by radiation which is problematic because SiO 2 -based devices are often employed in environments subject to ionizing radiation (in satellites, nuclear power plants, medical studies, etc.)…”
mentioning
confidence: 99%
“…Many such defects are created by radiation which is problematic because SiO 2 -based devices are often employed in environments subject to ionizing radiation (in satellites, nuclear power plants, medical studies, etc.) [2,4,5].The self-trapped exciton (STE) is one of the important radiation-induced defects in silica. Excitons in silica selftrap from low to at least room temperatures [6 -15].…”
mentioning
confidence: 99%
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“…Sweeping or solid-state electrolysis is a process which selectively exchanges monovalent impurity ions in a-quartz and has been studied for many years (Brice, 1985;Brown, O'Connor & Armington, 1980;Fraser, 1968;Jain & Nowick, 1981;King, 1959;Kats, 1962;Kreft, 1975;Martin, 1987;Pellegrini, Euler, Kahan, Flanagan & Wrobel, 1978;Kahan, Euler, Lipson, Chen & Halliburton, 1987). Sweeping of the crystals prior to fabrication has been reported (Fraser, 1968;Martin, 1987;Kahan etal., 1987;Pellegrini etal., 1978) to improve the performance of quartz crystal devices.…”
Section: Introductionmentioning
confidence: 99%
“…A number of papers (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19) have appeared on the radiation effects on the frequency characteristics of quartz crystals. The frequency changes due to irradiation by fast neutrons are permanent positive frequency offsets.…”
Section: Introductionmentioning
confidence: 99%