2020
DOI: 10.1109/access.2020.2967125
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Steady-State Simulation of Semiconductor Devices Using Discontinuous Galerkin Methods

Abstract: Plasmonic nanostructures can significantly improve the performance of photoconductive devices (PCDs). In the mean time, they introduce intricate structures and complex scattering, which lead new challenges to simulations.In this work, a multiphysics framework based on discontinuous Galerkin (DG) methods is proposed to model the nonlinearly-coupled multiphysics processes in plasmonic PCDs. Without optical pumping, the nonequilibrium steadystate of the device, described by a coupled Poisson/drift-diffusion (DD) … Show more

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Cited by 36 publications
(51 citation statements)
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“…In this work, we use the trap assisted recombination described by the Shockley-Read-Hall model [22], [30], [31]…”
Section: A Physical and Mathematical Descriptionmentioning
confidence: 99%
See 4 more Smart Citations
“…In this work, we use the trap assisted recombination described by the Shockley-Read-Hall model [22], [30], [31]…”
Section: A Physical and Mathematical Descriptionmentioning
confidence: 99%
“…The bias voltage is applied to the electrodes continuously throughout the operation of the device. Before the optical EM wave excitation is turned on, the device is under a non-equilibrium stationary state [22]. When the EM wave impinges on the device, carriers are generated.…”
Section: A Physical and Mathematical Descriptionmentioning
confidence: 99%
See 3 more Smart Citations