Steep-slope transistors enabled with 2D quantum coupling stacks

Abstract

As down scaling of transistors continues, there is a growing interest in developing steep-slope transistors with reduced subthreshold slope (SS) below the Boltzmann limit. In this work, we successfully fabricated steep-slope MoS2 transistors by incorporating a graphene layer, inserted in the gate stack. For our comprehensive study, we have applied density functional theory (DFT) to simulate and calculate the change of SS effected by different 2D quantum materials, including graphene, germanene and 2D topological insulators, inserted within the gate dielectric. This theoretical study showed that graphene/MoS2 devices had steep SS (27.2 mV/dec), validating our experimental approach (49.2 mV/dec). Furthermore, the simulations demonstrated very steep SS (8.6 mV/dec) in WTe2/MoS2 devices. We conclude that appropriate combination of various 2D quantum materials for the gate-channel stacks, leads to steep SS and is an effective method to extend the scaling of transistors with exceptional performance.

Design of silicon-on-insulator field-effect transistor using graphene channel to improve short channel effects over conventional devices

“…This structure is suitable for digital switching applications. Using 2-D materials, Raju et al [21] created a steep-slope transistor. utilized a layer of graphene in the gate stack.…”