Steep sub-threshold current slope (∼2mV/dec) Pt/Cu2S/Pt gated memristor with lon/Ioff&gt;100

Mou, Nurunnahar Islam; Zhang, Y.; Pai, Pradeep; Tabib-Azar, Massood

doi:10.1016/j.sse.2016.10.003

Cited by 16 publications

(9 citation statements)

References 11 publications

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“…This hydrogel sensor with FET was designed by using undoped and gold nanoparticle-doped hydrogel as the channel material in an open-channel FET structure. In earlier publications, we have reported the fabrication and characterization of this device, used as a platform for experimenting with different post-deposited channel materials [ 30 , 31 ]. The FET consisted of a bottom-embedded gate with hafnium oxide gate dielectric [ 30 , 31 ] and surface-exposed platinum drain and source electrodes with effective channel length of 1 µm.…”

Section: Methodsmentioning

confidence: 99%

“…This phenomenon was then exploited to design a novel metal-oxide-hydrogel field-effect transistor (MOHFET) whose channel material is a smart hydrogel. The MOHFET [ 28 ] design was based on an open-face Field-Effect Transistor (FET) structure reported before [ 28 , 29 , 30 , 31 ]. Here, drop-casting was used for depositing the hydrogel channel.…”

Section: Introductionmentioning

confidence: 99%

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Remote Microwave and Field-Effect Sensing Techniques for Monitoring Hydrogel Sensor Response

et al. 2018

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This paper presents two novel techniques for monitoring the response of smart hydrogels composed of synthetic organic materials that can be engineered to respond (swell or shrink, change conductivity and optical properties) to specific chemicals, biomolecules or external stimuli. The first technique uses microwaves both in contact and remote monitoring of the hydrogel as it responds to chemicals. This method is of great interest because it can be used to non-invasively monitor the response of subcutaneously implanted hydrogels to blood chemicals such as oxygen and glucose. The second technique uses a metal-oxide-hydrogel field-effect transistor (MOHFET) and its associated current-voltage characteristics to monitor the hydrogel’s response to different chemicals. MOHFET can be easily integrated with on-board telemetry electronics for applications in implantable biosensors or it can be used as a transistor in an oscillator circuit where the oscillation frequency of the circuit depends on the analyte concentration.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Remote Microwave and Field-Effect Sensing Techniques for Monitoring Hydrogel Sensor Response

et al. 2018

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“…Gate tunability of the switching voltage threshold has also been achieved in TiO x memristors [ 144 ] and Cu 2‐α S memristors, but with weaker field‐effect modulation. [ 145,146 ] These examples illustrate that thinner materials provide the most effective gate modulation by allowing for independent control over the volatile channel conductance states and non‐volatile memristive states. As the size of the neuromorphic memtransistor circuits increases, the requirement for low off‐current becomes more stringent, [ 77 ] suggesting that larger bandgap 2D semiconductors with larger resistive switching ratios will be required.…”

Section: Memtransistor Materials Mechanisms and Architecturesmentioning

confidence: 99%

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

et al. 2022

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Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy‐efficient information processing of the brain. While non‐volatile memory (NVM) based on resistive switches, phase‐change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi‐terminal device concepts are required for more sophisticated bio‐realistic functions. Of particular interest are memtransistors based on low‐dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi‐terminal NVM devices including dual‐gated floating‐gate memories, dual‐gated ferroelectric transistors, and dual‐gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase‐changes properties of nanomaterials. Finally, strategies for achieving wafer‐scale integration of memtransistors and multi‐terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

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“…We next incorporated the NP-VO2 in the channel of an open-channel FET that were fabricated on a glass substrate with a 100 nm Pt gate covered by a 50 nm atomic layer deposited (ALD) HfO2 dielectric and a 100 nm Pt drain and source electrodes, as shown in Figures 4a and 4b. The fabrication process is discussed in [14] and was started with etching a 4" glass substrate by immersing it in buffered oxide etch (BOE) for 1 minute to create 100 nm deep trenches for the gate metallization Next, we examined the slope of the I-V at V T /2 (see Figure 2b). This slope can be viewed as the switching current slope denoted by S c .…”

Section: Device Studiesmentioning

confidence: 99%

Nano-Particle VO2 Insulator-Metal Transition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope

Tabib-Azar¹,

Likhite²

2019

Electronics

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The possibility of controlling the insulator-to-metal transition (IMT) in nano-particle VO2 (NP-VO2) using the electric field effect in a metal-oxide-VO2 field-effect transistor (MOVFET) at room temperature was investigated for the first time. The IMT induced by current in NP-VO2 is a function of nano-particle size and was studied first using the conducting atomic force microscope (cAFM) current-voltage (I-V) measurements. NP-VO2 switching threshold voltage (VT), leakage current (Ileakage), and the sub-threshold slope of their conductivity (Sc) were all determined. The cAFM data had a large scatter. However, VT increased as a function of particle height (h) approximately as VT(V) = 0.034 h, while Ileakage decreased as a function of h approximately as Ileakage (A) = 3.4 × 10−8e−h/9.1. Thus, an asymptotic leakage current of 34 nA at zero particle size and a tunneling (carrier) decay constant of ~9.1 nm were determined. Sc increased as a function of h approximately as Sc (mV/decade) = 2.1 × 10−3eh/6 and was around 0.6 mV/decade at h~34 nm. MOVFETs composed of Pt drain, source and gate electrodes, HfO2 gate oxide, and NP-VO2 channels were then fabricated and showed gate voltage dependent drain-source switching voltage and current (IDS). The subthreshold slope (St) of drain-source current (IDS) varied from 42 mV/decade at VG = −5 V to 54 mV/decade at VG = +5 V.

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Steep sub-threshold current slope (∼2mV/dec) Pt/Cu2S/Pt gated memristor with lon/Ioff>100

Cited by 16 publications

References 11 publications

Remote Microwave and Field-Effect Sensing Techniques for Monitoring Hydrogel Sensor Response

Remote Microwave and Field-Effect Sensing Techniques for Monitoring Hydrogel Sensor Response

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Nano-Particle VO2 Insulator-Metal Transition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope

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