Step and Flash Nano Imprint Lithography of 80 nm Dense Line Pattern Using Trehalose Derivative Resist Material

Abstract

High resolution trehalose derivative resist which had specific desired properties was successfully developed for step and flash nano imprint lithography as one of advanced alternative lithography techniques. Step and flash nano imprint lithography is expected to be a high resolution, thin residual resist thickness, an ambient temperature and cost reduction technique in manufacturing. Excellent 80 nm dense line patterning was demonstrated in nano imprint lithography with ultraviolet crosslinking process. Lower film thickness shrinkage of the newly developed liquid trehalose derivative resist than that of acrylate type resist was one of key to achieve high resolution nano imprint patterns.

Nanoimprinted Organic Semiconductor Laser Pumped by a Light‐Emitting Diode

“…The small reduction (5%) in period is consistent with the fi lm shrinkage previously reported for mr-UVCur06. [ 33 ] The UV-NIL resist had a residual layer thickness of 300 nm, measured by surface profi lometry. The BBEHP-PPV polymer fi lm was deposited by spin-coating on top of the patterned resist layer.…”

Nanoimprint Resist Material Containing Ultraviolet Reactive Fluorine Surfactant for Defect Reduction in Lithographic Fabrication

“…The fluorinated self assembled monolayer reacts with the free silanol groups on the surface of the quartz template in a condensation reaction to form a single layer of fluorinated alkyl chains. The treatment using a fluorinated self assembled monolayer is found to degrade after repeated nanoimprints, suggesting a breakdown or erosion of the fluorinated monolayer [13,14]. The used template surface in this study was not treated with a common fluorinated self assembled monolayer.…”

“…The film volumetric shrinkages of the different nanoimprint resist materials have been investigated in the previous study [13]. The film volumetric shrinkages of mr-UVCur06 (Micro Resist Technology) with a liquid UV curing polymer system of low viscosity and high curing rate as a commercial nanoimprint material, and a second acrylate type resist consisting of n-butyl acrylate (27 wt%), isobornyl acrylate (50 wt%), ethylene glycol diacrylate (20 wt%), and 2-hydroxy-2-methyl-1-phenyl-1-propanone (3 wt%) were 8.3 and 9.0%, respectively.…”

Ultraviolet curing nanoimprint green lithography using water-repellent film derived from biomass for solar cells devices

“…The high adhesion between the silicon-containing underlayer and the nanoimprint material material led to excellent patterning fidelity and straight 80 nm resist profiles [10]. A trehalose derivative resist material with specific desired properties capable of producing 80 nm resolution was successfully developed for SFIL as an UV curing nanoimprint green lithography [11]. High quality nanoimprint patterning of dense lines and other complex structures was achieved using the proposed material design and UV imprinting conditions [12].…”