Step bunching behaviour on the {0001} surface of hexagonal SiC

Investigation of Calcium Carbonate Scaling Inhibition and Scale Morphology by AFM

“…It can be seen from Fig. 20b that the steps are bunched (39). The height of the five bunched monosteps is 1.79 nm.…”

Bulk growth of SiC – review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

“…In crystal D, with a relatively lower growth or interface temperature, macrosteps with terrace widths w ranging from 2-3 µm are observed (Fig. 16d) with a height, h, in the range 1.4-1.7 nm, which is about the lattice parameter c for 6H-SiC [58]. In crystal A (Fig.…”

“…The white dots in Fig. 16d are particles that adhered to the surface of the crystal during the cooling process [58].…”

Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

“…Also, it does not explain different step bunching behaviors observed on different off-angle substrates. Ohtani, et al, studied step bunching behavior on the 6H-and 4H-SiC crystal grown by physical vapor transport (PVT) method [112]. They discussed the mechanism of macrostep formation by considering the interplay between step energetics (repulsive step interaction) and asymmetric step dynamics on the growing crystal surface.…”

“…Nitrogen-induced macrostep bunching has been observed on C-face crystal grown by physical vapor transport (PVT) method [112]. Mechanism of macrostep bunching was discussed through the consideration of the interplay between step energetics (repulsive step interaction) and kinetics (asymmetric step kinetics).…”