Stimulated and spontaneous emission of CdxHg1−x Te structures in the range 3.2–3.7 µm at 77 K

10.1007/s11453-008-2009-6

“…These layers arranged on both sides of the active region have lower permittivity (see, for example, [5]) and, therefore, these structures themselves are natural waveguides for laser radiation. In this study, which develops recent reports [6][7][8], we represent the results of investigations of the conditions for emergence of stimulated radiation during optical pumping in MCT heterolayers of various compositions and thicknesses grown on GaAs and Si substrates using molecular beam epitaxy (MBE). We consider these studies to be the first step to fabrication of lasers for a mid-IR range based on quantum-size Cd x Hg 1 -x Te structures operating at room temperature.…”

Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022

“…Optical studies of MCT at the Institute of Microstructure Physics (IMP) in Russia were mostly aimed at obtaining stimulated emission: first, from the epitaxial films, and later, from the dedicated laser structures. The first cycle of works was performed in 2004-2014 [53][54][55][56][57][58][59][60] and was related to the study of the emission from the films and structures with potential wells with no effect of size quantization. These films were grown by MOCVD [53,54] or MBE on GaAs or Si (MBE only) [55][56][57][58][59][60] substrates with CdTe (MOCVD) or ZnTe/CdTe (MBE) buffer layers.…”

“…The first cycle of works was performed in 2004-2014 [53][54][55][56][57][58][59][60] and was related to the study of the emission from the films and structures with potential wells with no effect of size quantization. These films were grown by MOCVD [53,54] or MBE on GaAs or Si (MBE only) [55][56][57][58][59][60] substrates with CdTe (MOCVD) or ZnTe/CdTe (MBE) buffer layers. A Nd:YAG laser emitting at 1064 nm [53][54][55] or wavelength-tunable OPO (optical parametric oscillator) emitting at 400-2500 nm [56][57][58][59][60], both operating in a pulse mode, were used as the PL excitation source.…”

“…These films were grown by MOCVD [53,54] or MBE on GaAs or Si (MBE only) [55][56][57][58][59][60] substrates with CdTe (MOCVD) or ZnTe/CdTe (MBE) buffer layers. A Nd:YAG laser emitting at 1064 nm [53][54][55] or wavelength-tunable OPO (optical parametric oscillator) emitting at 400-2500 nm [56][57][58][59][60], both operating in a pulse mode, were used as the PL excitation source. Variable-temperature PL measurements were performed in the temperature range 12-300 K. Spectra of spontaneous emission were mostly recorded just for determination of the value of the threshold power density for the stimulated emission, so those were not analyzed in much detail [53][54][55][56].…”

“…Still, it should be noted that it was Ref. [53] that marked the beginning of the 'new era' of PL studies in MCT mentioned above. Later papers by this group at IMP were devoted purely to stimulated emission [57][58][59][60].…”