Stimulated crystallization of dielectric films on semiconductor surfaces (Si/SiO2)

Литовченко, В.Г.; Romanova, G. P.

doi:10.1016/0040-6090(81)90500-9

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1983

1992

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Cited by 7 publications

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Formation of semiconductor epitaxial films by pulse heating crystallization or regrowth

Александров

1983

Phys. Stat. Sol. (a)

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The contemporary state and perspectives of methods used, namely thermodynamical and kinetical characteristics of amorphous film crystallization and regrowth processes by pulse (laser, electron beam, etc.) heating are considered. On the base of experimental data thermodynamical diagrams of the processes of normal and accelerated, explosive or shock, crystallization of amorphous film (in the solid state) or regrowth (through the liquid phase) are given. An analysis of the acting mechanism by comparing the waiting time t0 for the appearance of the first nucleus of the crystalline or liquid phase with the time Δt of heating pulse is made. Calculation of possible size of the crystalline blocks and of the time of their growth gives ≈ 1 to 100 μm by ≈ 1 to 100 μs. The ways for improving the structure of polycrystalline epitaxial semiconductor films with large blocks are discussed.

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