Stimulated emission study of InGaN/GaN multiple quantum well structures

Abstract

We report the study results of an InGaN/GaN multiple quantum well structure with a nominal indium content of 25%. The high-resolution transmission electron microscopy and x-ray diffraction show clear indium aggregation and phase separation. Stimulated emission data always show two major peaks in spectrum. The long-͑short-͒ wavelength peak is assigned to the recombination of localized state carriers ͑free carriers͒. At low temperatures or optical pump levels, the localized-state recombination dominates the stimulated emission; however, at high temperatures or pump levels, the free-carrier recombination becomes dominant. The peak position corresponding to localized states changes little in spectrum as temperature or pump level varies. This result is attributed to carrier overflow, strain relaxation, and carrier shielding in increasing temperature or carrier supply.

Resistive heated MOCVD deposition of InN films

“…The nanocrystalline feature observed in the HRTEM image is distinctive to such compound. It has also been reported in the literature that nanocrystalline InN inclusion tend to be formed in In x Ga 1−x N system [2,27,28]. Interestingly, these nanocrystallites have been identified to play a key role in the high efficiency emission of the III-nitride system.…”

Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well

“…In the last years, several papers related with GaN/InGaN heterostructures have appeared in the literature due to the advances in semiconductor growth techniques. Theoretical and experimental works on the optical and electronic properties have been reported . The exciton states in III‐nitride semiconductor systems have also reported.…”