STM of layered‐structure semiconductors

Henson, Tammy D.; Sarid, Dror; Bell, Larry

doi:10.1111/j.1365-2818.1988.tb01409.x

Cited by 14 publications

(8 citation statements)

References 22 publications

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“…Physically, MoS 2 possesses a larger lattice constant than graphite (3.16 versus 2.46 Å). [57][58][59] Further, MoS 2 is a semiconductor whose surface structure is primarily comprised of Mo d z 2 and S p z orbitals. 58,59 (In contrast, graphite has C p z orbitals protruding out of the plane of the surface.)…”

Section: "Single Chemical Markers" In Stmmentioning

confidence: 99%

“…[57][58][59] Further, MoS 2 is a semiconductor whose surface structure is primarily comprised of Mo d z 2 and S p z orbitals. 58,59 (In contrast, graphite has C p z orbitals protruding out of the plane of the surface.) Combined, these effects have been reported to lead to interesting changes in monolayer order.…”

Section: "Single Chemical Markers" In Stmmentioning

confidence: 99%

“…This pattern likely results from the change in both physical and electronic properties of the new surface. Physically, MoS 2 possesses a larger lattice constant than graphite (3.16 versus 2.46 Å). − Further, MoS 2 is a semiconductor whose surface structure is primarily comprised of Mo d z 2 and S p z orbitals. , (In contrast, graphite has C p z orbitals protruding out of the plane of the surface.) Combined, these effects have been reported to lead to interesting changes in monolayer order. , …”

Section: Application Of “Double Chemical Marker Groups” In Stmmentioning

confidence: 99%

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Raising Flags: Applications of Chemical Marker Groups To Study Self-Assembly, Chirality, and Orientation of Interfacial Films by Scanning Tunneling Microscopy

Giancarlo¹,

Flynn²

2000

Acc. Chem. Res.

179

152

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When used in conjunction with "chemical marker groups" (functionalities such as -Br and -COOH), scanning tunneling microscopy is a powerful tool for studying the properties of liquid-solid interfaces. Chemical markers serve as "flags" for the identification of interfacial structures, allowing, for example, the absolute chirality of optically active molecules self-assembling on a graphite surface to be determined. Subtle changes in the orientation of these chemical functionalities that affect the long-range order of interfacial films have also been observed and explored. Finally, alterations in self-assembly resulting from variations in adsorbate or substrate structure can be deduced by taking advantage of these STM "flags".

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Section: "Single Chemical Markers" In Stmmentioning

confidence: 99%

Section: "Single Chemical Markers" In Stmmentioning

confidence: 99%

Section: Application Of “Double Chemical Marker Groups” In Stmmentioning

confidence: 99%

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Raising Flags: Applications of Chemical Marker Groups To Study Self-Assembly, Chirality, and Orientation of Interfacial Films by Scanning Tunneling Microscopy

Giancarlo¹,

Flynn²

2000

Acc. Chem. Res.

179

152

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“…Optical experiments indicate that the band gap of 2H-MoSz is actually indirect with a gap of _.1.25 eV[31]. Scanning tunneling microscopy (STM) experiments also show the presence of a 1.35 eV indirect gap in 2H-MoSz[32]. During the course of this study, it was found possible to increase the size of the theoretical band gap by increasing the contribution ez of the more diffuse Mo 4d double zeta STO.…”

mentioning

confidence: 72%

Ethanol synthesis and water gas shift over bifunctional sulfide catalysts. Technical progress report, March 1993--May 1993

Klier¹,

Herman²,

Richards-Babb³

1993

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During this quarter, a systematic study of the preparation of MOS3,the subsequent decomposition treatment to form MoSz, and the Cs-containing reagents and techniques to achieve surface doping of the MoSz with Cs has been initated. Complete characterization of the samples is being carried out at each stage, beginning with the MoS3 samples and ending with the tested catalysts. The goal of this research is to achieve a high surface area catalyst containing lower quantities of the Cs promoter in a highly dispersed state that is stable during catalytic testing. The results of these studies, along with the catalytic testing results of selected high surface area MoSz and Cs/MoSz catalysts, will be presented in the next quarterly progress report• Using experimental data (high resolution electron spectroscopy for chemical analysis (HR-ESCA)) and computational data (solid state Extended Hiickel (EH) theory) obtained previously, investigation and interpretation of the electronic structure of MoS2 (hexagonal 2H form, indicating 2 MoS2 molecules/unit cell) was carried out since the activation of hydrogen depends on the electronic properties of the catalyst. The theoretical valence band (TVB) of MoS2 was obtained by modification of the density of states (DOS) with appropriate valence shell photoelectron cross-sections for A1K_ radiation. Qualitative agreement between theoretical and experimental MoS z valence bands was obtained after parametrization of the EH input ionization potentials Hi__and Slater-type orbital (STO) double zeta coefficients c__. Theoretical energy dispersion curves, not given here, of two-and three-dimensional MoSz model systems (referred to as 2-D and 3-D MoSz) also compared

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“…Researches of CSs obtained under UHV for MoS 2 , WSe 2 , SnS 2 [11], and GaSe [12] cleavage surfaces using the methods of LEED, STM, and ultra-violet photoelectron spectroscopy [9] testify to the absence of hexagonal systems of unsaturated electron bonds on the CSs of layered crystals. The corresponding electron spectra of CSs weakly differ from the bulk ones [9,13] and the "pattern" of the surface plane, i.e.…”

Section: Introductionmentioning

confidence: 99%

Low-Energy-Electron-Diffraction Structural Studies of (100) Cleavage Surfaces of In4Se3 Layered Crystals

Galiy¹,

Losovyj²,

Nenchuk³

et al. 2014

Ukr. J. Phys.

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Structure stability and "thermal" parameters of (100) cleavage surfaces of In4Se3 crystals have been studied using the low energy electron diffraction method. The structure of (100) cleavage surfaces of In4Se3 crystals is shown to be stable and not subjected to any reconstruction in a wide temperature interval of 77-295 K. The Debye temperature and the Debye-Waller factor of studied surfaces were calculated on the basis of experimental data obtained for the temperature dependence of the intensities of diffraction spots (the intensities decreased, as the temperature grew). It is confirmed that the Debye temperatures for the cleavage surface (100) and in the bulk of In4Se3 crystal are different. The anisotropy of thermal expansion along the main crystallographic lattice directions in the cleavage plane (100) of In4Se3 is established. K e y w o r d s: low energy electron diffraction, layered crystals, interlayer cleavage surfaces, Debye temperature, Debye-Waller factor, anisotropy of thermal expansion.

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STM of layered‐structure semiconductors

Abstract: SUMMARY We have used scanning tunnelling microscopy to characterize the layered structure semiconductors MoS2, WSe2 and SnS2. Atomically resolved images as well as spectroscopic data in both tunnelling directions have been obtained for the cleaved surfaces of these materials.

Cited by 14 publications

References 22 publications

Raising Flags: Applications of Chemical Marker Groups To Study Self-Assembly, Chirality, and Orientation of Interfacial Films by Scanning Tunneling Microscopy

Raising Flags: Applications of Chemical Marker Groups To Study Self-Assembly, Chirality, and Orientation of Interfacial Films by Scanning Tunneling Microscopy

Ethanol synthesis and water gas shift over bifunctional sulfide catalysts. Technical progress report, March 1993--May 1993

Low-Energy-Electron-Diffraction Structural Studies of (100) Cleavage Surfaces of In4Se3 Layered Crystals

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