SUMMARY
We have used scanning tunnelling microscopy to characterize the layered structure semiconductors MoS2, WSe2 and SnS2. Atomically resolved images as well as spectroscopic data in both tunnelling directions have been obtained for the cleaved surfaces of these materials.
Articles you may be interested inThe image potential in scanning tunneling microscopy of semiconductor surfaces Summary Abstract: Scanning tunneling microscopy of semiconductor surfaces
Atomically resolved images of MoS2 have been obtained using scanning tunneling microscopy with both positively and negatively biased samples yielding the hexagonal symmetry of the surface of the crystal. Also measured were curves of tunneling current as a function of bias voltage, from which the density of states of the valence and conduction bands can be inferred.
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