STM study of the Ge growth mode on Si(001) substrates

Size distribution and electroluminescence of self-assembled Ge dots

“…The general observation is that island distribution and island density depend on growth parameters such as temperature, total coverage, growth rate and time, chemical species, faceted substrates, etc. [8][9][10][14][15][16][17][18][19][20][21][22][23][24] All of these parameters influence the surface migration and implicitly the island formation.…”

Strain in Nanoscale Germanium Hut Clusters on Si(001) Studied by X-Ray Diffraction

“…At higher coverages sometimes larger Ge islands are formed as described in Ref. [5]. It is important to note that the nanoscale clusters are metastable and are formed only at growth temperatures below 530 ± C. The name "hut cluster" was introduced by Mo et al [6] in the course of their scanning tunneling microscope (STM) investigations on the epitaxial growth of Ge on Si͑001͒.…”

GeSi strained nanostructure self-assembly for nano- and opto-electronics.

“…1 [9][10][11][12], and (6) misfit dislocation formation, possibly accompanied by superdome formation [5,11]. A similar transition sequence is observed with increasing Ge fraction in the alloy up to pure Ge, but the relevant length scales are reduced, and lower deposition temperatures can be used in order to observe the sequence [5].…”