STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors

Abstract

Scanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).

Dual‐Gated MoS2 Memtransistor Crossbar Array

“…[15] Point defects are also known to play a critical role in vertical memristors based on monolayer, bilayer, and few-layer MoS 2 . [16] The detailed role of lattice point defects in the memristive I-V characteristics of MoS 2 devices can likely be revealed by atomically resolved in situ scanning tunneling microscopy [17] or scanning transmission electron microscopy. [8a,18] The dual-gated MoS 2 memtransistors show excellent cycle-tocycle endurance, as shown by the tight distribution of switching characteristics for 250 bias sweeps (Figure 2a) and stable resistance values in HRS and LRS ( Figure 2b).…”

“…[ 15 ] Point defects are also known to play a critical role in vertical memristors based on monolayer, bilayer, and few‐layer MoS 2 . [ 16 ] The detailed role of lattice point defects in the memristive I – V characteristics of MoS 2 devices can likely be revealed by atomically resolved in situ scanning tunneling microscopy [ 17 ] or scanning transmission electron microscopy. [ 8a,18 ]…”