Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique

Abstract

A stochastic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. This result indicates that a decrease of the switching time with increasing temperature cannot be explained only by reduced occupations of the vacancies in the low occupation region, but is related to an increase of the mobility of the oxide ions. A hysteresis cycle of RRAM switching simulated with the stochastic model including the ion dynamics is in good agreement with experimental results.

High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications

“…Meanwhile, understanding the fundamental physics behind resistive switching is also crucial, and from various density functional theoretical (DFT) studies and experimental studies, the switching mechanism of a metal oxide ReRAM device has been explained [ 17 , 18 , 19 ]. Mostly, in metal oxides, the oxygen vacancy filament mechanism dominates compared to other switching mechanisms, and oxygen filaments-dominated resistive memory is a prominent and highly reliable candidate for the next-generation memory [ 20 , 21 ]. Dielectric thin films as a resistive switching material have been studied extensively through the scientific community [ 16 ].…”

The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)

“…In 2013, owing to the reduced cost per bit and easy to incorporate chips as 3D crossbar provisions ReRAM memory technology was accounted by International Technology Road Map For Semiconductors (ITRS). Owing, to their sub-ns operation speed (<10 ns), lower power consumption (<0.1 pJ), long retention time (<10 years), high endurance cycle (>10 12 cycles), excellent miniaturization potential down to <10 nm and compatibility to the existing CMOS technology for integration with current solid state devices make them potential candidate for future semiconductor applications [4][5][6][7][8][9][10]. The resistive switching behaviour was observed in much class of materials such as binary metal oxides (SiO x , WO x , ZrO 2, HfO x and ZnO, etc), Perovskites and organic compounds and it works with the variation of resistivity with low and high current states with respect to the applied electric field [11].…”