Stoichiometric disturbances in ion implanted compound semiconductors

Christel, L. A.; Gibbons, J. F.

doi:10.1063/1.329448

Cited by 258 publications

(53 citation statements)

References 10 publications

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“…While the vacancies are likely to stay closer to the surface, the interstitials are supposed to be in excess at the end of range of the implanted ions. 9,10 Moreover, according to the theoretical work of Christel and Gibbons, 9 it is expected that the distribution profile for the N interstitials ͑N i ͒ will be displaced to a greater depth with respect to that of the Ga interstitials ͑Ga i ͒. It is plausible that the two peaks observed in this case are stemming from the different parts of the interstitial dominated zone; peak 1 is originating from the region which is dominated by both Ga i and N i , while the origin of peak 2 is the tail section of the N i distribution profile, as shown in the inset of the figure.…”

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confidence: 99%

Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN

Khaderbad

Dhar

Pérez

et al. 2007

Applied Physics Letters

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The authors have studied the effect of annealing on the magnetic and the structural properties of Gd focused ion beam implanted GaN samples. Molecular beam epitaxy grown GaN layers, which were implanted with 300keV Gd3+ ions at room temperature at doses 2.4×1011 and 1.0×1015cm−2, are rapid thermally annealed in flowing N2 gas up to 900°C for 30s. X-ray diffraction results indicate the presence of Ga and N interstitials in the implanted layers. Their densities are also found to reduce upon annealing. At the same time, magnetic measurements on these samples clearly show a reduction in the saturation magnetization as a result of the annealing for the lowest Gd incorporated sample, while in the highest Gd incorporated sample it does not change. These findings suggest that Gd might be inducing magnetic moment in Ga and/or N interstitials in giving rise to an effective colossal magnetic moment of Gd and the associated ferromagnetism observed in Gd:GaN.

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confidence: 99%

Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN

Khaderbad

Dhar

Pérez

et al. 2007

Applied Physics Letters

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“…The proper reconstruction of the damaged InP lattice depends on the availability of both constituent atoms in the correct proportions near the interface between damaged and recrystallized regions. 25 The significant phosphorus loss occurring during annealing, 26 as well as the greater range of recoiling for P atoms compared to In atoms, 26 may be important factors preventing a greater degree of recrystallization in InP samples.…”

Section: Resultsmentioning

confidence: 99%

Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP

Artús

Cuscó

Ibáñez

et al. 1997

Journal of Applied Physics

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We have studied the lattice recovery by rapid thermal annealing of Si ϩ -implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875°C for 10 s, the intensity of the second-order peaks approaches 70% of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved.

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“…It is well known that the stoichiometric disturbances caused by ion-implantation in compound semiconductors are in the form of lattice vacancies at the surface. 20,27,28 The concentration of vacancies at the surface increases with the atomic mass of the implant species. Since As and Sb are heavier than N and P, the concentration of Si and C vacancies at the surface is greater than the peak-implant concentration.…”

Section: Arsenic and Antimony Implantations In 6h-sic Epilayersmentioning

confidence: 99%